Structure of GaAs-In0.2Ga0.8As heterojunction interface studied by electron spectroscopies: X-ray photoelectron spectroscopy, tunable electron energy loss spectroscopy and Auger electron spectroscopy

1987 ◽  
Vol 146 (3) ◽  
pp. 291-297 ◽  
Author(s):  
M. Iwami ◽  
Y. Watanabe ◽  
H. Kato ◽  
M. Nakayama ◽  
N. Sano
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