Structure of GaAs-In0.2Ga0.8As heterojunction interface studied by electron spectroscopies: X-ray photoelectron spectroscopy, tunable electron energy loss spectroscopy and Auger electron spectroscopy
1992 ◽
Vol 10
(4)
◽
pp. 2822-2825
◽
1980 ◽
Vol 76
(0)
◽
pp. 1122
◽
1990 ◽
Vol 8
(1)
◽
pp. 68
◽
1987 ◽
Vol 5
(4)
◽
pp. 1456-1458
◽
1992 ◽
Vol 189
(6)
◽
pp. 577-580
◽