145. Preparation of epitaxial ZnS films on GaAs in an open system with hydrogen flow

Vacuum ◽  
1973 ◽  
Vol 23 (2) ◽  
pp. 73
Keyword(s):  
2012 ◽  
Vol 3 (2) ◽  
pp. 160-161
Author(s):  
JIGAR L DAVE ◽  
Keyword(s):  

2008 ◽  
Vol 104 (11/12) ◽  
Author(s):  
J.C. Vogel ◽  
M.A. Geyh

The radiometric dating of calcrete is often problematical because impurities and open system conditions affect the apparent ages obtained. By applying both radiocarbon and uranium-series dating to calcrete in colluvium, it is shown that such conditions can be identified. In correlation with the stratigraphy, it is found that partial recrystallization severely decreases the radiocarbon ages of the upslope and shallower samples further down, whereas incorporation of limestone fragments from bedrock significantly increases the apparent ages of some of the uranium-series samples. It is concluded that the hillslope calcrete at the study site near Sede Beker in the Negev Desert, Israel, mainly developed shortly after 40 kyr ago, at a time when the Jordan Valley was being inundated to form the fossil Lake Lisan. Since their formation would have required higher rainfall than today, the results provide further evidence that the whole region was experiencing an increase in precipitation.


Author(s):  
Ashok Jadhavar ◽  
Vidya Doiphode ◽  
Ajinkya Bhorde ◽  
Yogesh Hase ◽  
Pratibha Shinde ◽  
...  

: Herein, we report effect of variation of hydrogen flow rate on properties of Si:H films synthesized using PE-CVD method. Raman spectroscopy analysis show increase in crystalline volume fraction and crystallite size implying that hydrogen flow in PECVD promote the growth of crystallinity in nc-Si:H films with an expense of reduction in deposition rate. FTIR spectroscopy analysis indicates that hydrogen content in the film increases with increase in hydrogen flow rate and hydrogen is predominantly incorporated in Si-H2 and (Si-H2)n bonding configuration. The optical band gap determined using E04 method and Tauc method (ETauc) show increasing trend with increase in hydrogen flow rate and E04 is found higher than ETauc over the entire range of hydrogen flow rate studied. We also found that the defect density and Urbach energy also increases with increase in hydrogen flow rate. Photosensitivity (Photo /Dark) decreases from  103 to  1 when hydrogen flow rate increased from 30 sccm to 100 sccm and can attributed to amorphous-to-nanocrystallization transition in Si:H films. The results obtained from the present study demonstrated that hydrogen flow rate is an important deposition parameter in PE-CVD to synthesize nc-Si:H films.


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