Deposition of device quality silicon dioxide thin films by remote plasma enhanced chemical vapor deposition

Vacuum ◽

10.1016/0042-207x(89)90815-4 ◽

1989 ◽

Vol 39 (10) ◽

pp. 981

Keyword(s):

Chemical Vapor Deposition ◽

Silicon Dioxide ◽

Vapor Deposition ◽

Chemical Vapor ◽

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Deposition of device quality silicon dioxide thin films by remote plasma enhanced chemical vapor deposition

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.575283 ◽

1988 ◽

Vol 6 (3) ◽

pp. 1740-1744 ◽

Author(s):

Sang S. Kim ◽

D. V. Tsu ◽

G. Lucovsky

Keyword(s):

Chemical Vapor Deposition ◽

Silicon Dioxide ◽

Vapor Deposition ◽

Chemical Vapor ◽

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Remote plasma chemical vapor deposition silicon oxynitride thin films: Dielectric properties

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.590013 ◽

1998 ◽

Vol 16 (3) ◽

pp. 1087 ◽

Author(s):

M. Hernández Vélez

Keyword(s):

Chemical Vapor Deposition ◽

Dielectric Properties ◽

Vapor Deposition ◽

Chemical Vapor ◽

Silicon Oxynitride ◽

Remote Plasma ◽

Plasma Chemical ◽

Plasma Chemical Vapor Deposition

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Atomic structure in SiO2 thin films deposited by remote plasma‐enhanced chemical vapor deposition

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.576242 ◽

1989 ◽

Vol 7 (3) ◽

pp. 1136-1144 ◽

Author(s):

G. Lucovsky ◽

J. T. Fitch ◽

D. V. Tsu ◽

S. S. Kim

Keyword(s):

Chemical Vapor Deposition ◽

Atomic Structure ◽

Vapor Deposition ◽

Chemical Vapor ◽

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Deposition of SiO2 Thin Films by Remote Plasma Enhanced Chemical Vapor Deposition (Remote PECVD)

The Physics and Chemistry of SiO2 and the Si-SiO2 Interface ◽

10.1007/978-1-4899-0774-5_13 ◽

1988 ◽

pp. 119-127 ◽

Author(s):

D. V. Tsu ◽

S. S. Kim ◽

G. Lucovsky

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Chemical Vapor ◽

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Composition, structural, and electrical properties of fluorinated silicon–nitride thin films grown by remote plasma-enhanced chemical-vapor deposition from SiF[sub 4]/NH[sub 3] mixtures

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.1699335 ◽

2004 ◽

Vol 22 (3) ◽

pp. 570 ◽

Author(s):

J. Fandiño ◽

A. Ortiz ◽

L. Rodrı́guez-Fernandez ◽

J. C. Alonso

Keyword(s):

Chemical Vapor Deposition ◽

Silicon Nitride ◽

Electrical Properties ◽

Vapor Deposition ◽

Chemical Vapor ◽

Remote Plasma ◽

Structural And Electrical Properties

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ChemInform Abstract: Preparation of Device-Quality SiO2 Thin Films by Remote Plasma- Enhanced Chemical Vapor Deposition (PECVD): Applications in Metal- Oxide-Semiconductor (MOS) Devices

10.1002/chin.199636322 ◽

2010 ◽

Vol 27 (36) ◽

pp. no-no

Author(s):

G. LUCOVSKY

Keyword(s):

Chemical Vapor Deposition ◽

Metal Oxide ◽

Vapor Deposition ◽

Chemical Vapor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Remote Plasma ◽

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Deposition and characterization of silicon dioxide thin films deposited by mercury-arc-source driven photon-activated chemical-vapor deposition

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.583978 ◽

1988 ◽

Vol 6 (1) ◽

pp. 470 ◽

Author(s):

Kevin J. Scoles

Keyword(s):

Chemical Vapor Deposition ◽

Silicon Dioxide ◽

Vapor Deposition ◽

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Microstructure and interfacial states of silicon dioxide film grown by low temperature remote plasma enhanced chemical vapor deposition

Journal of Applied Physics ◽

10.1063/1.370893 ◽

1999 ◽

Vol 86 (3) ◽

pp. 1346-1354 ◽

Author(s):

Young-Bae Park ◽

Shi-Woo Rhee

Keyword(s):

Chemical Vapor Deposition ◽

Low Temperature ◽

Silicon Dioxide ◽

Vapor Deposition ◽

Chemical Vapor ◽

Remote Plasma ◽

Silicon Dioxide Film ◽

Interfacial States ◽

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Properties of gate quality silicon dioxide films deposited on Si–Ge using remote plasma-enhanced chemical vapor deposition with no preoxidation

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.590576 ◽

1999 ◽

Vol 17 (2) ◽

pp. 460 ◽

Author(s):

R. Sharma ◽

J. L. Fretwell ◽

T. Ngai ◽

S. Banerjee

Keyword(s):

Chemical Vapor Deposition ◽

Silicon Dioxide ◽

Vapor Deposition ◽

Chemical Vapor ◽

Remote Plasma ◽

Silicon Dioxide Films

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Biased Electron Cyclotron Resonance Chemical-Vapor Deposition of Silicon Dioxide Inter-Metal Dielectric Thin Films

Materials Science Forum ◽

10.4028/www.scientific.net/msf.140-142.255 ◽

1993 ◽

Vol 140-142 ◽

pp. 255-268 ◽

Author(s):

P. Shufflebotham ◽

M. Weise ◽

D. Pirkle ◽

D. Denison

Keyword(s):

Chemical Vapor Deposition ◽

Silicon Dioxide ◽

Vapor Deposition ◽

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Chemical Vapor ◽

Electron Cyclotron ◽

Dielectric Thin Films

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