The creation of point defects in alkali halides

ABSTRACTEPR, photocarrier cyclotron resonance and DLTS measurements have been performed on laser-annealed Si wafers.In virgin Si, an isotropic EPR line at g1 = 2.0055± 0.0005 and a carrier lifetime decrease, assessed by cyclotron resonance, are correlated to the creation of vacancy complexes associated to Oxygen.In implanted Si, only defects due to the tailing effect of implantation process are observed by DLTS. These levels can be divided into two groups, one of them is stronglycorrelated with the implanted parameter. They are ascribed to primary or complex associations of point defects.

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The Effect of Surface Oxides on the Creation of Point Defects in GaAs Studied by Slow Positron Beam

Japanese Journal of Applied Physics ◽

10.1143/jjap.30.l138 ◽

1991 ◽

Vol 30 (Part 2, No. 2A) ◽

pp. L138-L141 ◽

Cited By ~ 5

Author(s):

Jong-Lam Lee ◽

Long Wei ◽

Shoichiro Tanigawa ◽

Haruhiro Oigawa ◽

Yasuo Nannichi

Keyword(s):

Point Defects ◽

Positron Beam ◽

Slow Positron ◽

Surface Oxides ◽

The Creation ◽

Effect Of Surface

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Excitonic and electron–hole mechanisms of the creation of Frenkel defect in alkali halides

Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ◽

10.1016/s0168-583x(99)00788-0 ◽

2000 ◽

Vol 166-167 ◽

pp. 529-537 ◽

Cited By ~ 31

Author(s):

A. Lushchik ◽

M. Kirm ◽

Ch. Lushchik ◽

E. Vasil’chenko

Keyword(s):

Alkali Halides ◽

Electron Hole ◽

Frenkel Defect ◽

The Creation

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Thermoelectric Properties and a Defective Subsystem of Heterophasic Materials on the Basis of a Lead Telluride with Impurity of Antimony

Фізика і хімія твердого тіла ◽

10.15330/pcss.20.2.149-155 ◽

2019 ◽

Vol 20 (2) ◽

pp. 149-155

Author(s):

V.V. Prokopiv ◽

M.O. Galushchak ◽

I.V. Horichok ◽

T.O. Parashchuk ◽

O.M. Matkivskiy ◽

...

Keyword(s):

Thermoelectric Properties ◽

Point Defects ◽

Significant Influence ◽

Lead Telluride ◽

Heat Energy ◽

Promising Material ◽

Technological Factors ◽

Dominant Point ◽

The Creation ◽

Additional Phase

The results of the study of thermoelectric properties and the defective subsystem of lead telluride doped by antimony PbTe:Sb (8%), promising material for the creation of heat energy converters on their basis. The regularities in the behavior of the properties investigated, which are due to the biphasicity of the material and the significant influence of the technological factors of obtaining samples on their defective subsystem, are established. The modeling of the defect subsystem of PbTe:Sb crystals was carried out taking into account thepresence of additional phase inclusions and it was found that dominant point defects are internode atoms of antimony.

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