substitutional defects
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Author(s):  
Martin Matas ◽  
Alireza Farhadizadeh ◽  
Jiri Houska

Abstract We study the hard and electrically conductive multicomponent diboride Ti0.25Zr0.25Hf0.25Ta0.25B2 with high thermal stability by ab initio calculations. We focus on the effect of defects (either vacancies or C atoms, both relevant for numerous experiments including our own) on material characteristics. Different types, concentrations and distributions of defects were investigated, and the configurations leading to the lowest formation energies were identified. We show that the replacement of B by C is more unfavorable than the formation of B vacancies. We show that vacancies prefer to coalesce into a larger planar void, minimizing the number of broken B B bonds and the volume per atom, while carbon substitutions at boron sites do not prefer coalescence and tend to minimize the number of C-C bonds. We show the effect of vacancies on mechanical and electronic properties, and use the results to explain experimental data.


Molecules ◽  
2021 ◽  
Vol 26 (11) ◽  
pp. 3392
Author(s):  
Terence Zhi Xiang Hong ◽  
Liming You ◽  
Madhavi Dahanayaka ◽  
Adrian Wing-Keung Law ◽  
Kun Zhou

In this study, molecular dynamics simulation is used to investigate the effects of water-based substitutional defects in zeolitic imidazolate frameworks (ZIF)-8 membranes on their reverse osmosis (RO) desalination performance. ZIF-8 unit cells containing up to three defect sites are used to construct the membranes. These substitutional defects can either be Zn defects or linker defects. The RO desalination performance of the membranes is assessed in terms of the water flux and ion rejection rate. The effects of defects on the interactions between the ZIF-8 membranes and NaCl are investigated and explained with respect to the radial distribution function (RDF) and ion density distribution. The results show that ion adsorption on the membranes occurs at either the nitrogen atoms or the defect sites. Complete NaCl rejection can be achieved by introducing defects to change the size of the pores. It has also been discovered that the presence of linker defects increases membrane hydrophilicity. Overall, molecular dynamics simulations have been used in this study to show that water-based substitutional defects in a ZIF-8 structure reduce the water flux and influence its hydrophilicity and ion adsorption performance, which is useful in predicting the type and number of defect sites per unit cell required for RO applications. Of the seven ZIF-8 structures tested, pristine ZIF-8 exhibits the best RO desalination performance.


Author(s):  
Laurent Bétermin

AbstractWe consider interaction energies $$E_f[L]$$ E f [ L ] between a point $$O\in {\mathbb {R}}^d$$ O ∈ R d , $$d\ge 2$$ d ≥ 2 , and a lattice L containing O, where the interaction potential f is assumed to be radially symmetric and decaying sufficiently fast at infinity. We investigate the conservation of optimality results for $$E_f$$ E f when integer sublattices kL are removed (periodic arrays of vacancies) or substituted (periodic arrays of substitutional defects). We consider separately the non-shifted ($$O\in k L$$ O ∈ k L ) and shifted ($$O\not \in k L$$ O ∉ k L ) cases and we derive several general conditions ensuring the (non-)optimality of a universal optimizer among lattices for the new energy including defects. Furthermore, in the case of inverse power laws and Lennard-Jones-type potentials, we give necessary and sufficient conditions on non-shifted periodic vacancies or substitutional defects for the conservation of minimality results at fixed density. Different examples of applications are presented, including optimality results for the Kagome lattice and energy comparisons of certain ionic-like structures.


2020 ◽  
Vol 45 (44) ◽  
pp. 23928-23936 ◽  
Author(s):  
Trupti K. Gajaria ◽  
Basant Roondhe ◽  
Shweta D. Dabhi ◽  
Piotr Śpiewak ◽  
Krzysztof J. Kurzydłowski ◽  
...  

2020 ◽  
Vol 11 ◽  
pp. 688-694 ◽  
Author(s):  
Majid Sanaeepur

A nanometer-scaled resonant tunneling diode based on lateral heterojunctions of armchair graphene and boron nitride nanoribbons, exhibiting negative differential resistance is proposed. Low-bandgap armchair graphene nanoribbons and high-bandgap armchair boron nitride nanoribbons are used to design the well and the barrier region, respectively. The effect of all possible substitutional defects (including BC, NC, CB, and CN) at the interface of graphene and boron nitride nanoribbons on the negative differential resistance behavior of the proposed resonant tunneling diode is investigated. Transport simulations are carried out in the framework of tight-binding Hamiltonians and non-equilibrium Green’s functions. The results show that a single substitutional defect at the interface of armchair graphene and boron nitride nanoribbons can dramatically affect the negative differential resistance behavior depending on its type and location in the structure.


Nanomaterials ◽  
2020 ◽  
Vol 10 (4) ◽  
pp. 710 ◽  
Author(s):  
Sujeong Jung ◽  
Jae Ho Kim ◽  
Jin Woo Choi ◽  
Jae-Wook Kang ◽  
Sung-Ho Jin ◽  
...  

We determine the influence of substitutional defects on perovskite quantum dots through experimental and theoretical investigations. Substitutional defects were introduced by trivalent dopants (In, Sb, and Bi) in CsPbBr3 by ligand-assisted reprecipitation. We show that the photoluminescence (PL) emission peak shifts toward shorter wavelengths when doping concentrations are increased. Trivalent metal-doped CsPbBr3 enhanced the PL quantum yield (~10%) and air stability (over 10 days). Our findings provide new insights into the influence of substitutional defects on substituted CsPbBr3 that underpin their physical properties.


2019 ◽  
Vol 21 (27) ◽  
pp. 14646-14653
Author(s):  
Yoshihiro Aiura ◽  
Kenichi Ozawa ◽  
Yasuhisa Tezuka ◽  
Makoto Minohara ◽  
Akane Samizo ◽  
...  

La-on-Sr substitution defects in SrTiO3 generate electrons and simultaneously cause local distortion in the conduction pathway.


2019 ◽  
Vol 7 (33) ◽  
pp. 19316-19323 ◽  
Author(s):  
Juan Li ◽  
Fei Jia ◽  
Shuai Zhang ◽  
Shuqi Zheng ◽  
Boyi Wang ◽  
...  

By optimizing the concentration of the substitutional defect PrMg1, Mg3.2Pr0.02Sb1.5Bi0.5 exhibits a peak zT value of 1.70 at 725 K.


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