Ion beam analysis techniques and characterization of amorphous hydrogenated GaAs

1983 ◽  
Vol 218 (1-3) ◽  
pp. 579-583 ◽  
Author(s):  
J.P. Thomas ◽  
M. Fallavier ◽  
H. Carchano ◽  
L. Alimoussa
Author(s):  
S.R Walker ◽  
J.A Davies ◽  
P Mascher ◽  
S.G Wallace ◽  
W.N Lennard ◽  
...  

2015 ◽  
Vol 299 ◽  
pp. 587-595 ◽  
Author(s):  
R. Gonzalez-Arrabal ◽  
M. Panizo-Laiz ◽  
K. Fujita ◽  
K. Mima ◽  
A. Yamazaki ◽  
...  

2002 ◽  
Author(s):  
Vijaya K. Mathe ◽  
Dinesh K. Sood ◽  
Nick Dytlewski ◽  
Peter J. Evans

1998 ◽  
Vol 511 ◽  
Author(s):  
H. Bakhru ◽  
A. Kumar ◽  
T. Kaplan ◽  
M. Delarosa ◽  
J. Fortin ◽  
...  

ABSTRACTIon beam analysis techniques have become very useful for characterization of low k materials. Studies on several ion beam analysis techniques will be discussed. Rutherford Backscattering Spectrometry (RBS) provides a very powerful analytical technique for the thickness and porosity measurements on porous Si0 2 films. Nuclear Reaction Analysis (NRA) techniques for hydrogen and fluorine profiling are very useful to characterize fluorinated polymer and fluorinated oxide films. Examples of low k materials including Si02:F, Parylene-AF and Teflon-AF will be discussed. Fluorine diffusion in to metals and various interface effects between metal and low k materials will be presented.


Author(s):  
E. Andrade ◽  
C. Solis ◽  
J.M. Aceves ◽  
R. Miranda ◽  
J. Cruz ◽  
...  

Author(s):  
P. Wei ◽  
M. Chicoine ◽  
S. Gujrathi ◽  
F. Schiettekatte ◽  
J.-N. Beaudry ◽  
...  

1994 ◽  
Vol 249 (2) ◽  
pp. 266-270 ◽  
Author(s):  
P Gros ◽  
G Fiat ◽  
D Brun ◽  
B Daudin ◽  
J Eymery ◽  
...  

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