Nanosecond resolved X-ray diffraction during pulsed laser annealing of silicon

1983 ◽  
Vol 208 (1-3) ◽  
pp. 511-517 ◽  
Author(s):  
D.M. Mills ◽  
B.C. Larson ◽  
C.W. White ◽  
T.S. Noggle
Keyword(s):  
Laser Annealing ◽  
Pulsed Laser ◽  
X Ray Diffraction ◽  
X Ray ◽  
Pulsed Laser Annealing

Synchrotron X-Ray Study of the Structure of Silicon During Pulsed Laser Processing

1981 ◽  
Vol 4 ◽  
Author(s):  
B. C. Larson ◽  
C. W. White ◽  
T. S. Noggle ◽  
J. F. Barhorst ◽  
D. Mills
Keyword(s):  
Laser Annealing ◽  
Pulsed Laser ◽  
Temperature Profiles ◽  
X Ray Diffraction ◽  
Time Resolved ◽  
Near Surface ◽  
X Ray ◽  
Pulsed Laser Annealing ◽  
Pulsed Laser Processing ◽  
Thermal Melting

ABSTRACTSynchrotron x-ray pulses have been used to make nanosecond resolution time-resolved x-ray diffraction measurements on silicon during pulsed laser annealing. Thermal expansion analysis of near-surface strains during annealing has provided depth dependent temperature profiles indicating >1100°C temperatures and diffraction from boron implanted silicon has shown evidence for near-surface melting. These results are in qualitative agreement with the thermal melting model of laser annealing.

X-ray studies: CO2 pulsed laser annealing effects on the crystallographic properties, microstructures and crystal defects of vacuum-deposited nanocrystalline ZnSe thin films

CrystEngComm ◽  
2018 ◽  
Vol 20 (44) ◽  
pp. 7120-7129 ◽  
Author(s):  
Ahmed Saeed Hassanien ◽  
Alaa A. Akl
Keyword(s):  
Thin Films ◽  
Laser Annealing ◽  
Pulsed Laser ◽  
Crystal Defects ◽  
Microstructural Properties ◽  
X Ray Diffraction ◽  
X Ray ◽  
Pulsed Laser Annealing ◽  
Annealing Effects ◽  
Znse Thin Films

The influence of CO2 pulsed laser annealing on microstructural properties and crystal defects of nanocrystalline ZnSe thin films have been studied. X-ray diffraction was utilized to study these issues. Laser annealing led to enhance the film quality and decrease the crystal defects.

Double-Crystal X-ray Diffraction Studies of Si ion-Implanted and Pulsed Laser-Annealed GaAs

1990 ◽  
Vol 34 ◽  
pp. 531-541
Author(s):  
P. M. Adams ◽  
J. F. Knudsen ◽  
R. C. Bowman
Keyword(s):  
Ion Implantation ◽  
Laser Annealing ◽  
Pulsed Laser ◽  
Thermal Treatments ◽  
X Ray Diffraction ◽  
Surface Layers ◽  
Double Crystal ◽  
X Ray ◽  
Pulsed Laser Annealing ◽  
Microelectronic Devices

Ion-implantation has many applications in the fabrication and processing of microelectronic devices from semiconductors, but thermal treatments are required to remove defects produced by the implant and to electrically activate dopants. Recently, pulsed laser annealing has been used to activate surface layers of GaAs that have been heavily doped with 28Si+ by ion implantation, and carrier concentrations of > 1 x 1019 cm-3 have been achieved (Ref. 1). Double-crystal x-ray diffraction techniques are very sensitive to strains and defects in single crystals and provide a means for characterizing and quantifying the damage produced by ion-implantation and the subsequent relief of damage by pulsed laser annealing.

Synchrotron X-Ray Diffraction Study of Silicon during Pulsed-Laser Annealing

1982 ◽  
Vol 48 (5) ◽  
pp. 337-340 ◽  
Author(s):  
B. C. Larson ◽  
C. W. White ◽  
T. S. Noggle ◽  
D. Mills
Keyword(s):  
Diffraction Study ◽  
Laser Annealing ◽  
Pulsed Laser ◽  
X Ray Diffraction ◽  
X Ray ◽  
Pulsed Laser Annealing

Time-resolved X-ray diffraction from silicon during pulsed laser annealing

1986 ◽  
Vol 58 (4) ◽  
pp. 269-272 ◽  
Author(s):  
J.G. Lunney ◽  
P.J. Dobson ◽  
J.D. Hares ◽  
S.D. Tabatabaei ◽  
R.W. Eason
Keyword(s):  
Laser Annealing ◽  
Pulsed Laser ◽  
X Ray Diffraction ◽  
Time Resolved ◽  
X Ray ◽  
Pulsed Laser Annealing

Time‐resolved x‐ray diffraction measurement of the temperature and temperature gradients in silicon during pulsed laser annealing

1983 ◽  
Vol 42 (3) ◽  
pp. 282-284 ◽  
Author(s):  
B. C. Larson ◽  
C. W. White ◽  
T. S. Noggle ◽  
J. F. Barhorst ◽  
D. M. Mills
Keyword(s):  
Laser Annealing ◽  
Pulsed Laser ◽  
Temperature Gradients ◽  
Diffraction Measurement ◽  
X Ray Diffraction ◽  
Time Resolved ◽  
X Ray ◽  
Pulsed Laser Annealing

X-Ray Investigations of Dislocations in an Implanted Si Crystal Induced by Pulsed Laser Annealing

1995 ◽  
Vol 147 (2) ◽  
pp. K69-K71 ◽  
Author(s):  
J. Auleytner ◽  
M. Skorokhod ◽  
L. Datsenko ◽  
V. Khrupa ◽  
A. Briginets
Keyword(s):  
Laser Annealing ◽  
Pulsed Laser ◽  
X Ray ◽  
Pulsed Laser Annealing

Recrystallization of Amorphous Silicon Using Rapid Thermal Processing, Laser Annealing and Furnace Heating

1994 ◽  
Vol 342 ◽  
Author(s):  
J. Viatella ◽  
R.K. Singi ◽  
R.P.S. Thiakur ◽  
G. Sandhu ◽  
S.D. Harkness
Keyword(s):  
Amorphous Silicon ◽  
Laser Annealing ◽  
Laser Wavelength ◽  
X Ray Diffraction ◽  
Incoherent Light ◽  
Furnace Annealing ◽  
X Ray ◽  
Pulsed Laser Annealing ◽  
Conventional Furnace ◽  
Transmission Electron

ABSTRACTRecrystallization of amorphous silicon has been investigated using conventional furnace annealing, incoherent light-based rapid thermal annealing (RTA) and pulsed laser annealing using excimner laser (wavelength=248 nm, energy density = 0.1−0.6 J/cm2) at a pulse width of approximately 20 nanoseconds. The effects of annealing methods are characterized for grain growth and crystallized orientation using transmission electron microscopy (TEM) and X-ray diffraction analysis. The various recrystallization methods are compared based on the structural properties of the resulting film and optimized thermal budgets for each heating mechanism are discussed.

X-ray and RHEED Characterization of Ge Ions-Implanted Si Crystals Subjected to Pulsed-Laser Annealing

1992 ◽  
Vol 27 (7) ◽  
pp. 959-964 ◽  
Author(s):  
J. Auleytner ◽  
H. Fiedorowicz ◽  
Z. Furmanik ◽  
Z. Patron ◽  
K. Regiński
Keyword(s):  
Laser Annealing ◽  
Pulsed Laser ◽  
X Ray ◽  
Pulsed Laser Annealing
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