Synchrotron X-Ray Study of the Structure of Silicon During Pulsed Laser Processing

1981 ◽  
Vol 4 ◽  
Author(s):  
B. C. Larson ◽  
C. W. White ◽  
T. S. Noggle ◽  
J. F. Barhorst ◽  
D. Mills
Keyword(s):  
Laser Annealing ◽  
Pulsed Laser ◽  
Temperature Profiles ◽  
X Ray Diffraction ◽  
Time Resolved ◽  
Near Surface ◽  
X Ray ◽  
Pulsed Laser Annealing ◽  
Pulsed Laser Processing ◽  
Thermal Melting

ABSTRACTSynchrotron x-ray pulses have been used to make nanosecond resolution time-resolved x-ray diffraction measurements on silicon during pulsed laser annealing. Thermal expansion analysis of near-surface strains during annealing has provided depth dependent temperature profiles indicating >1100°C temperatures and diffraction from boron implanted silicon has shown evidence for near-surface melting. These results are in qualitative agreement with the thermal melting model of laser annealing.

Time-resolved X-ray diffraction from silicon during pulsed laser annealing

1986 ◽  
Vol 58 (4) ◽  
pp. 269-272 ◽  
Author(s):  
J.G. Lunney ◽  
P.J. Dobson ◽  
J.D. Hares ◽  
S.D. Tabatabaei ◽  
R.W. Eason
Keyword(s):  
Laser Annealing ◽  
Pulsed Laser ◽  
X Ray Diffraction ◽  
Time Resolved ◽  
X Ray ◽  
Pulsed Laser Annealing

Nanosecond resolved X-ray diffraction during pulsed laser annealing of silicon

1983 ◽  
Vol 208 (1-3) ◽  
pp. 511-517 ◽  
Author(s):  
D.M. Mills ◽  
B.C. Larson ◽  
C.W. White ◽  
T.S. Noggle
Keyword(s):  
Laser Annealing ◽  
Pulsed Laser ◽  
X Ray Diffraction ◽  
X Ray ◽  
Pulsed Laser Annealing

X-ray studies: CO2 pulsed laser annealing effects on the crystallographic properties, microstructures and crystal defects of vacuum-deposited nanocrystalline ZnSe thin films

CrystEngComm ◽  
2018 ◽  
Vol 20 (44) ◽  
pp. 7120-7129 ◽  
Author(s):  
Ahmed Saeed Hassanien ◽  
Alaa A. Akl
Keyword(s):  
Thin Films ◽  
Laser Annealing ◽  
Pulsed Laser ◽  
Crystal Defects ◽  
Microstructural Properties ◽  
X Ray Diffraction ◽  
X Ray ◽  
Pulsed Laser Annealing ◽  
Annealing Effects ◽  
Znse Thin Films

The influence of CO2 pulsed laser annealing on microstructural properties and crystal defects of nanocrystalline ZnSe thin films have been studied. X-ray diffraction was utilized to study these issues. Laser annealing led to enhance the film quality and decrease the crystal defects.

Double-Crystal X-ray Diffraction Studies of Si ion-Implanted and Pulsed Laser-Annealed GaAs

1990 ◽  
Vol 34 ◽  
pp. 531-541
Author(s):  
P. M. Adams ◽  
J. F. Knudsen ◽  
R. C. Bowman
Keyword(s):  
Ion Implantation ◽  
Laser Annealing ◽  
Pulsed Laser ◽  
Thermal Treatments ◽  
X Ray Diffraction ◽  
Surface Layers ◽  
Double Crystal ◽  
X Ray ◽  
Pulsed Laser Annealing ◽  
Microelectronic Devices

Ion-implantation has many applications in the fabrication and processing of microelectronic devices from semiconductors, but thermal treatments are required to remove defects produced by the implant and to electrically activate dopants. Recently, pulsed laser annealing has been used to activate surface layers of GaAs that have been heavily doped with 28Si+ by ion implantation, and carrier concentrations of > 1 x 1019 cm-3 have been achieved (Ref. 1). Double-crystal x-ray diffraction techniques are very sensitive to strains and defects in single crystals and provide a means for characterizing and quantifying the damage produced by ion-implantation and the subsequent relief of damage by pulsed laser annealing.

Synchrotron X-Ray Diffraction Study of Silicon during Pulsed-Laser Annealing

1982 ◽  
Vol 48 (5) ◽  
pp. 337-340 ◽  
Author(s):  
B. C. Larson ◽  
C. W. White ◽  
T. S. Noggle ◽  
D. Mills
Keyword(s):  
Diffraction Study ◽  
Laser Annealing ◽  
Pulsed Laser ◽  
X Ray Diffraction ◽  
X Ray ◽  
Pulsed Laser Annealing

Time-Resolved Study of Silicon During Pulsed-Laser Annealing

1983 ◽  
Vol 13 ◽  
Author(s):  
B. C. Larson ◽  
C. W. White ◽  
T. S. Noggle ◽  
J. F. Barhorst ◽  
D. M. Mills
Keyword(s):  
Laser Annealing ◽  
Pulsed Laser ◽  
Laser Pulses ◽  
High Energy ◽  
Temperature Gradients ◽  
Time Resolved ◽  
Synchrotron Source ◽  
Near Surface ◽  
Solid Interface ◽  
Pulsed Laser Annealing

ABSTRACTNear surface temperatures and temperature gradients have been studied in silicon during pulsed laser annealing. The investigation was carried out using nanosecond resolution x-ray diffraction measurements made at the Cornell High Energy Synchrotron Source. Thermal-induced-strain analyses of these real-time, extended Bragg scattering measurements have shown that the lattice temperature reached the melting point during 15 ns, 1.1–1.5 J/cm2 ruby laser pulses and that the temperature of the liquid-solid interface remained at that temperature throughout the high reflectivity phase, after which time the surface temperature subsided rapidly. The temperature gradients below the liquid-solid interface were found to be in the range of 107°C/cm.

Phase Selection During Pulsed Laser Annealing of Fe-V Alloys

1986 ◽  
Vol 74 ◽  
Author(s):  
J. H. Perepezko ◽  
D. M. Follstaedt ◽  
P. S. Peercy
Keyword(s):  
Melting Point ◽  
Laser Annealing ◽  
Rapid Heating ◽  
Pulsed Laser ◽  
Phase Selection ◽  
Near Surface ◽  
Σ Phase ◽  
Pulsed Laser Annealing ◽  
Α Phase ◽  
Temperature Equilibrium

AbstractPulsed laser melting of the low-temperature σ (tetragonal, D8b) phase has been used to generate a liquid undercooled with respect to the melting point of the higher-temperature, equilibrium α (bcc) solid solution in equiatomic Fe-V alloys. From calculations based on reported thermodynamic data and equilibrium transformation temperatures, the metastable melting point of the σ phase is about 1720 K for an Fe-50 at.% V alloy, which is 54 K below the melting temperature of the α phase. During rapid heating of well-annealed σ-phase material with a 30 ns laser pulse to above melt threshold, the σ → α reaction is suppressed, so that the melt zone is undercooled by ∼ 54 K with respect to the equilibrium α phase. The α phase nucleates from the undercooled molten surface layer and is retained during the subsequent rapid cooling (∼ 1010 K/s) because of the relatively sluggish α → σ transformation. X-ray diffraction (Read camera) and TEM identified the α phase in the near-surface after melting σ with incident laser energies (1.0–1.41 J/cm2) which are well above the melt threshold as determined by changes in reflectivity (∼ 0.7 J/cm2). The α phase nucleated from the undercooled liquid within ∼ 20 ns.

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