On the different time dependence of interface trap generation and charge trapping during hot carrier degradation in CMOS

1992 ◽  
Vol 19 (1-4) ◽  
pp. 465-468 ◽  
Author(s):  
R. Bellens ◽  
G. Groeseneken ◽  
P. Heremans ◽  
H.E. Maes
Keyword(s):  
Time Dependence ◽  
Charge Trapping ◽  
Interface Trap ◽  
Hot Carrier ◽  
Hot Carrier Degradation

The Influence of Mechanical Stress on Hot-Carrier Degradation in Mosfet's

1993 ◽  
Vol 309 ◽  
Author(s):  
Ingrid De Wolf ◽  
Rudi Bellens ◽  
Guido Groeseneken ◽  
Herman E. Maes
Keyword(s):  
Raman Spectroscopy ◽  
Tensile Stress ◽  
Mechanical Stress ◽  
Interface Trap ◽  
Degradation Behaviour ◽  
Hot Carrier ◽  
Stress Measurements ◽  
Micro Raman Spectroscopy ◽  
Hot Carrier Degradation

AbstractNon-uniform hot-carrier degradation in n-channel polycide-gate MOSFET's with different thicknesses of the poly-Si film, and in p-channel polycide-gate MOSFET's with TiSi2- or CoSi2-gate-silicide, is studied. The n-MOSFET's with the thinnest poly-Si film, show an increased interface trap generation, while the influence of the gate-silicide material on the degradation behaviour of the p-MOSFET's is found to be very small. The results are evaluated in terms of the effect of mechanical stress on the degradation characteristics: favourable for compressive mechanical stress and unfavourable for tensile stress. A correlation with stress measurements by micro-Raman spectroscopy is made.

An Alternative Approach for Modeling the Hot Carrier Degradation of the Si/SiO2 Interface

1998 ◽  
Vol 513 ◽  
Author(s):  
Zhi Chen ◽  
Jinju Lee ◽  
Joseph W. Lyding
Keyword(s):  
Experimental Data ◽  
Theoretical Model ◽  
Power Law ◽  
Interface Trap ◽  
Hot Carrier ◽  
Alternative Approach ◽  
Physical Insight ◽  
Insight Into ◽  
Good Agreement ◽  
Hot Carrier Degradation

ABSTRACTAn alternative approach for modeling the hot carrier degradation of the Si/SiO2 interface based on the dispersive characteristics of the interface trap generation has been proposed. The timedependent interface trap generation has been modeled using the stretched exponential expression. The conventional power law of degradation is just the approximation of this general form. Very good agreement has been found between the theoretical model and the experimental data. This approach gives more physical insight into the understanding of the mechanism for the interface trap generation.

Observation of Normally Distributed Energies for Interface Trap Recovery After Hot-Carrier Degradation

2013 ◽  
Vol 34 (8) ◽  
pp. 939-941 ◽  
Author(s):  
Gregor Pobegen ◽  
Stanislav Tyaginov ◽  
Michael Nelhiebel ◽  
Tibor Grasser
Keyword(s):  
Interface Trap ◽  
Hot Carrier ◽  
Hot Carrier Degradation ◽  
Normally Distributed

Time dependence of hot-carrier degradation in LDD nMOSFETs

1991 ◽  
Vol 15 (1-4) ◽  
pp. 441-444 ◽  
Author(s):  
Q. Wang ◽  
W.H. Krautschneider ◽  
M. Brox ◽  
W. Weber
Keyword(s):  
Time Dependence ◽  
Hot Carrier ◽  
Hot Carrier Degradation

The Influence of Mechanical Stress on Hot-Carrier Degradation in Mosfet'S

1993 ◽  
Vol 308 ◽  
Author(s):  
Ingrid De Wolf ◽  
Rudi bellens ◽  
Guido Groeseneken ◽  
Herman E. Maes
Keyword(s):  
Raman Spectroscopy ◽  
Tensile Stress ◽  
Mechanical Stress ◽  
Interface Trap ◽  
Degradation Behaviour ◽  
Hot Carrier ◽  
Stress Measurements ◽  
Micro Raman Spectroscopy ◽  
Hot Carrier Degradation

ABSTRACTNon-uniform hot-carrier degradation in n-channel polycide-gate MOSFET's with different thicknesses of the poly-Si film, and in p-channel polycide-gate MOSFET's with TiSi2- or CoSi2-gate-silicide, is studied. The n-MOSFET's with the thinnest poly-Si film, show an increased interface trap generation, while the influence of the gate-silicide material on the degradation behaviour of the p-MOSFET's is found to be very small. The results are evaluated in terms of the effect of mechanical stress on the degradation characteristics: favourable for compressive mechanical stress and unfavourable for tensile stress. A correlation with stress measurements by micro-Raman spectroscopy is made.

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