Recent progress in refractory-metal silicide formation by ion beam mixing and its applications to VLSL

Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ◽

10.1016/0168-583x(89)90781-7 ◽

1989 ◽

Vol 39 (1-4) ◽

pp. 246-252 ◽

Author(s):

Hidekazu Okabayashi

Keyword(s):

Refractory Metal ◽

Recent Progress ◽

Ion Beam ◽

Metal Silicide ◽

Silicide Formation ◽

Ion Beam Mixing

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Refractory metal silicide formation by ion beam mixing and rapid thermal annealing

Applied Physics Letters ◽

10.1063/1.96059 ◽

1985 ◽

Vol 47 (7) ◽

pp. 688-691 ◽

Author(s):

D. L. Kwong ◽

D. C. Meyers ◽

N. S. Alvi ◽

L. W. Li ◽

E. Norbeck

Keyword(s):

Thermal Annealing ◽

Rapid Thermal Annealing ◽

Refractory Metal ◽

Ion Beam ◽

Metal Silicide ◽

Silicide Formation ◽

Ion Beam Mixing

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Origin of ion beam mixing effects on morphological features in solid-phase titanium silicide formation

Applied Physics A Solids and Surface ◽

10.1007/bf00324492 ◽

1990 ◽

Vol 50 (3) ◽

pp. 265-267 ◽

Author(s):

Tadashi Suzuki ◽

Takao Miyazaki ◽

Nobuyoshi Natsuaki

Keyword(s):

Solid Phase ◽

Ion Beam ◽

Morphological Features ◽

Titanium Silicide ◽

Silicide Formation ◽

Ion Beam Mixing ◽

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Foreign atom incorporation during metal silicide formation by ion beam synthesis

Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ◽

10.1016/s0168-583x(97)00616-2 ◽

1998 ◽

Vol 135 (1-4) ◽

pp. 392-396 ◽

Author(s):

Yanwen Zhang ◽

Harry J. Whitlow ◽

Tonghe Zhang

Keyword(s):

Ion Beam ◽

Metal Silicide ◽

Silicide Formation ◽

Foreign Atom ◽

Ion Beam Synthesis

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Ti Silicide formation using as ion beam mixing

Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ◽

10.1016/s0168-583x(87)80149-0 ◽

1987 ◽

Vol 19-20 ◽

pp. 746-748 ◽

Author(s):

Ning Yu ◽

Zuyao Zhou ◽

Wei Zhou ◽

Shichang Tsou ◽

Dezhang Zhu

Keyword(s):

Ion Beam ◽

Silicide Formation ◽

Ion Beam Mixing

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Cobalt silicide formation caused by arsenic ion beam mixing and rapid thermal annealing

Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ◽

10.1016/0168-583x(91)96277-r ◽

1991 ◽

Vol 55 (1-4) ◽

pp. 773-777 ◽

Author(s):

Min Ye ◽

Edmund Burte ◽

Pei-Hsin Tsien ◽

Heiner Ryssel

Keyword(s):

Thermal Annealing ◽

Rapid Thermal Annealing ◽

Ion Beam ◽

Cobalt Silicide ◽

Silicide Formation ◽

Ion Beam Mixing

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Ion Beam Mixing for Silicide Formation

Isotopenpraxis Isotopes in Environmental and Health Studies ◽

10.1080/10256019008624296 ◽

1990 ◽

Vol 26 (6) ◽

pp. 265-268 ◽

Author(s):

S. A. Agamy ◽

M. Y. Khalil ◽

A. A. Badawi

Keyword(s):

Ion Beam ◽

Silicide Formation ◽

Ion Beam Mixing

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Refractory metal silicide formation by sputtering a refractory metal on heated Si substrates

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.573292 ◽

1985 ◽

Vol 3 (3) ◽

pp. 714-717 ◽

Author(s):

M. Tanielian ◽

S. Blackstone

Keyword(s):

Refractory Metal ◽

Metal Silicide ◽

Silicide Formation ◽

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Effect of ion-beam mixing temperature on cobalt silicide formation

Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ◽

10.1016/0168-583x(93)90682-v ◽

1993 ◽

Vol 80-81 ◽

pp. 786-789 ◽

Author(s):

I. Kasko ◽

C. Dehm ◽

L. Frey ◽

H. Ryssel

Keyword(s):

Ion Beam ◽

Cobalt Silicide ◽

Silicide Formation ◽

Ion Beam Mixing

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Selective tungsten silicide formation by ion‐beam mixing and rapid thermal annealing

Journal of Applied Physics ◽

10.1063/1.334421 ◽

1985 ◽

Vol 57 (6) ◽

pp. 1890-1894 ◽

Author(s):

B‐Y. Tsaur ◽

C. K. Chen ◽

C. H. Anderson ◽

D. L. Kwong

Keyword(s):

Thermal Annealing ◽

Rapid Thermal Annealing ◽

Ion Beam ◽

Silicide Formation ◽

Ion Beam Mixing ◽

Tungsten Silicide

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Smooth Silicide Formation by Ion Beam Mixing of Ti/Si-Layers

MRS Proceedings ◽

10.1557/proc-74-443 ◽

1986 ◽

Vol 74 ◽

Author(s):

K. Kohlhof ◽

S. Mantl ◽

B. Stritzker

Keyword(s):

Ion Beam ◽

Liquid Nitrogen Temperature ◽

Silicide Formation ◽

Furnace Annealing ◽

Ion Beam Mixing ◽

X Ray ◽

Surfaces And Interfaces ◽

Conventional Furnace ◽

Conventional Furnace Annealing ◽

Substrate Temperatures

AbstractIon beam mixing experiments of Ti-Si layers have been performed with Kr ions of 250 keV energy and doses ranging from 7 1015 to 7 1016 cm-2 at temperatures between liquid nitrogen temperature and 450°C. At substrate temperatures below 120°C no silicide formation could be detected. Only weak mixing at the Ti-Si interface is observed. At temperatures above 120°C the formation of TiSi2 could be verified by Rutherford backscattering and X-ray diffractometry. Layers of TiSi2 produced by ion beam mixing show smooth surfaces in contrast to those prepared by conventional furnace annealing. Those display rough surfaces and interfaces.

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