Scalable nanoparticle assembly on carbon nanotubes using flash-induced dewetting

Nanoparticle assembly through a novel photothermal dewetting was demonstrated on a macro-scale carbon nanotube (CNT) film. Intense pulsed Xe-light (IPL) was applied to transform a gold (Au) thin-film on CNT into nanoparticles (NPs). Au films measuring 3, 6, and 9 nm were completely dewetted by 10, 20, and 35 J/cm2 of IPL intensities, respectively. The means of NP diameters after dewetting were 7.25 nm (standard deviation, σ = 2.23 nm), 13.07 nm ( σ = 2.38 nm), and 21.02 nm ( σ = 5.86 nm) for the 3, 6, and 9 nm of Au films, respectively. On the other hand, the means of Au NPs formed by furnace annealing were 13.16 nm ( σ = 1.78 nm) and 20.98 nm ( σ = 15.60 nm) for 6 and 9 nm of Au films, respectively. The 6 and 9 nm of Au films on CNTs were annealed in a furnace at 300 and 400℃, respectively. The distributions of NPs induced by IPL were not significantly different from the result of conventional furnace annealing ( p values = 0.45 and 0.96 for 6 and 9 nm Au films, respectively). Finally, thermodynamic stability of IPL dewetted NPs was evaluated by comparing the samples treated with multiple IPL up to five times and with extended thermal annealing up to 10 h.

A comparative corrosion study of electroless Ni-P coatings treated by microwave and conventional furnace annealing

This work aims at studying the corrosion behavior of electroless Ni-P coating on mild steel substrate heat-treated by microwave and conventional furnace (muffle) annealing. The corrosion behavior of the deposits has been evaluated by potentiodynamic polarization studies in 3.5 wt% sodium chloride solution. The heat treatment temperatures of both the microwave and the conventional furnace annealing were kept at regular intervals to study the corrosion performance of the coatings. Microwave heat treatment significantly improved the corrosion performance of the coatings. Further, corrosion mechanisms of as-coated, various microwave- and conventional heat-treated coatings were discussed for the consideration of phase constituents, grain sizes and microstrain.

EFFECT OF ANNEALING TREATMENT ON FERROELECTRIC AND ELECTRICAL CHARACTERISTICS OF Bi4-XLaXTi3O12 THIN FILMS ON ITO/GLASS SUBSTRATE

In this study, the effects of annealing temperatures on microstructure and growth properties of Bi 3.9 La 0.1 Ti 3 O 12 (BLT) thin films on ITO substrate under conventional furnace annealing processing as a function of annealing temperatures were developed. The ferroelectric and physical properties of BLT thin films were investigated. The maximum capacitance and minimum leakage current density of BLT thin films under conventional furnace annealing processing were 4.5 nF and 10-6 A/cm2, respectively. In addition, the X-ray diffraction (XRD) patterns and grain size of SEM morphology exhibited the growth and nucleation properties of BLT thin films increased with the increase of conventional furnace annealing temperatures. The results demonstrated the correlation between the electrical, physical properties and growth and nucleation features of BLT thin films.

Quantum State in Solid-Phase Crystallization of a-Si:H by FA

Amorphous silicon films prepared by PECVD on glass substrate has been crystallized by conventional furnace annealing (FA) at different temperatures. From the Raman spectra and scanning electronic microscope (SEM), it is found that the thin film grain size present quantum states with annealing temperature.

Microwave Annealing of Ion Implanted 6H-SiC

Microwave rapid thermal annealing has been utilized to remove the lattice damage caused by nitrogen (N) ion-implantation as well as to activate the dopant in 6H-SiC. Samples were annealed at temperatures as high as 1400 °C, for 10 min. Van der Pauw Hall measurements indicate an implant activation of 36%, which is similar to the value obtained for the conventional furnace annealing at 1600 °C. Good lattice quality restoration was observed in the Rutherford backscattering and photoluminescence spectra.

Electrical Activation of Boron in B+ + C+ Implanted Si during RTA with Different Heating Rates

ABSTRACTSilicon samples were single implanted with B+ (5 x 1014 cm−2, 50 keV) or co-implanted with C+ (5 x 1015 cm−2, 55 keV). Rapid thermal annealing (RTA) with heating rates (HR) of 1°C/s and 100°C/s with dwell time duration from 2 s to 15 min was used for B activation and the results compared with those provided by conventional furnace annealing (FA) for 30 min. In single implanted samples it was found that below 600°C or above 800°C the activation always increases with the annealing time. However, in the temperature range of 600-800°C and annealing times longer than 60 s a fraction of the initially activated B concentration deactivates. For temperatures in the range of 700-800°C the deactivation is followed again by another activation period. There is no noticeable difference between the activation yields after RTA with high HR for 15 min or FA for 30 min. In the C co-implanted samples the activation of boron saturates after few minutes. In addition the deactivation process is significantly reduced. A model assuming interaction of the B atoms with point defects and the C atoms with Si self- interstitial atoms is proposed to explain the results.