Origin of ion beam mixing effects on morphological features in solid-phase titanium silicide formation

1990 ◽  
Vol 50 (3) ◽  
pp. 265-267 ◽  
Author(s):  
Tadashi Suzuki ◽  
Takao Miyazaki ◽  
Nobuyoshi Natsuaki
Keyword(s):  
Solid Phase ◽  
Ion Beam ◽  
Morphological Features ◽  
Titanium Silicide ◽  
Silicide Formation ◽  
Ion Beam Mixing ◽  
Mixing Effects

Ion beam-mixing effects in nearly lattice-matched AlInN/GaN heterostructures by swift heavy ion irradiation

2012 ◽  
Vol 167 (7) ◽  
pp. 506-511 ◽  
Author(s):  
G. Devaraju ◽  
S. V.S. Nageswara Rao ◽  
N. Srinivasa Rao ◽  
V. Saikiran ◽  
T. K. Chan ◽  
...  
Keyword(s):  
Ion Irradiation ◽  
Ion Beam ◽  
Heavy Ion ◽  
Ion Beam Mixing ◽  
Swift Heavy Ion Irradiation ◽  
Heavy Ion Irradiation ◽  
Mixing Effects ◽  
Swift Heavy Ion ◽  
Lattice Matched

Formation of GaAs Ohmic Contacts by Using Ion Beam Mixing

1985 ◽  
Vol 54 ◽  
Author(s):  
S. Furukawa ◽  
T. Asano ◽  
T. Fukada ◽  
H. Ishiwara ◽  
K. Tsutsui
Keyword(s):  
Ohmic Contacts ◽  
Ion Beam ◽  
High Dose ◽  
Doped Semiconductors ◽  
Ion Beam Mixing ◽  
Mixing Effects ◽  
Annealing Step ◽  
Short Period ◽  
Constant Dose ◽  
Pt Films

ABSTRACTIon beam mixing effects on metals and highly doped semiconductors on GaAs for formation of ohmic contacts have been studied. In this study, we have principally selected Pt as metal and Ge as semiconductors electrodes for GaAs. In Pt/GaAs system, we observed alloying phenomena induced by Si+, Ar+, Ge+ ion mixing effects. The amount of GaAs reacted with Pt was found to be proportional to the mass of the incident ions for constant dose. Concernig with the formation of ohmic contacts, only in the case of Si implantation through Pt films, the conversion from Schottky- to ohmic-contact was observed due to ion beam mixing effects. In Ge/GaAs system, we observad the solid state epitaxy for implanted Ge layer by the first annealing at 450°C in the two step annealing, but no activation of the implanted species. For activating implanted species, the second annealing at 800°C was effective. Concerning with the formation of ohmic contacts, we observed that the ohmic I-V characteristics for Ge/GaAs system could be obtainable when the following conditions were satisfied at the same time: 1) high dose implantation of As+ into Ge layer, 2) low dose implantation of Si into Ge/GaAs boundary and 3) relatively short period annealing in the second annealing step. From such study, it is concluded that ion beam mixing in conjunction with rapid annealing would be most promising for forming stable and reproducible ohmic contacts.

Ti Silicide formation using as ion beam mixing

1987 ◽  
Vol 19-20 ◽  
pp. 746-748 ◽  
Author(s):  
Ning Yu ◽  
Zuyao Zhou ◽  
Wei Zhou ◽  
Shichang Tsou ◽  
Dezhang Zhu
Keyword(s):  
Ion Beam ◽  
Silicide Formation ◽  
Ion Beam Mixing

Formation of Titanium Silicide by Multiple Arsenic Implantations and Ion Beam Mixing

1991 ◽  
Vol 224 ◽  
Author(s):  
Po-Ching Chen ◽  
Jian-Yang Lin ◽  
Huey-Liang Hwang
Keyword(s):  
Electron Diffraction ◽  
Sheet Resistance ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Ion Beam ◽  
Titanium Silicide ◽  
Mixing Conditions ◽  
Cross Sectional ◽  
Ion Beam Mixing ◽  
Post Annealing

AbstractTitanium silicide was formed on the top of Si wafers by arsenic ion beam mixing and rapid thermal annealing. Three different arsenic-ion mixing conditions were examined in this work. The sheet resistance, residue As concentration post annealing and TiSi2 phase were characterized by using the* four-point probe, RBS and electron diffraction, respectively. TiSi2 of C54 phase was identified in the doubly implanted samples. The thickness of the Ti silicide and the TiSi2/Si interface were observed by the cross-sectional TEM.

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