Planar-channeling radiation from MeV electrons in diamond and silicon

Author(s):  
S.B. Dabagov ◽  
V.V. Beloshitsky ◽  
M.A. Kumakhov
2021 ◽  
Vol 16 (12) ◽  
pp. P12042
Author(s):  
A.A. Savchenko ◽  
W. Wagner

Abstract We present a new C++ module for simulation of channeling radiation to be implemented in Geant4 as a discrete physical process. The module allows simulation of channeling radiation from relativistic electrons and positrons with energies above 100 MeV for various types of single crystals. In this paper, we simulate planar channeling radiation applying the classical approach in the dipole approximation as a first attempt not yet considering other contributory processes. Simulation results are proved to be in a rather good agreement with experimental data.


Author(s):  
B.L. Berman ◽  
S. Datz ◽  
R.W. Fearick ◽  
R.L. Swent ◽  
R.H. Pantell ◽  
...  

2007 ◽  
Author(s):  
B. Azadegan ◽  
W. Wagner ◽  
J. Pawelke ◽  
L. Sh. Grigoryan

1983 ◽  
Vol 96 (6) ◽  
pp. 314-318 ◽  
Author(s):  
S. Datz ◽  
R.W. Fearick ◽  
H. Park ◽  
R.H. Pantell ◽  
R.L. Swent ◽  
...  

2007 ◽  
Vol 78 (5) ◽  
pp. 56004 ◽  
Author(s):  
W Wagner ◽  
B Azadegan ◽  
L. Sh Grigoryan ◽  
J Pawelke

1986 ◽  
Vol 33 (2) ◽  
pp. 839-845 ◽  
Author(s):  
P. Amendt ◽  
M. Strauss ◽  
H. U. Rahman ◽  
N. Rostoker

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