scholarly journals Planar channeling radiation by relativistic electrons in different structures of silicon carbide

2012 ◽  
Vol 357 ◽  
pp. 012027 ◽  
Author(s):  
B Azadegan ◽  
S B Dabagov ◽  
W Wagner
Keyword(s):  
Silicon Carbide ◽  
Relativistic Electrons ◽  
Planar Channeling ◽  
Channeling Radiation

New module for channeling radiation simulation in Geant4

2021 ◽  
Vol 16 (12) ◽  
pp. P12042
Author(s):  
A.A. Savchenko ◽  
W. Wagner
Keyword(s):  
Experimental Data ◽  
Single Crystals ◽  
Dipole Approximation ◽  
Relativistic Electrons ◽  
Planar Channeling ◽  
Classical Approach ◽  
Electrons And Positrons ◽  
Simulation Results ◽  
Channeling Radiation ◽  
Good Agreement

Abstract We present a new C++ module for simulation of channeling radiation to be implemented in Geant4 as a discrete physical process. The module allows simulation of channeling radiation from relativistic electrons and positrons with energies above 100 MeV for various types of single crystals. In this paper, we simulate planar channeling radiation applying the classical approach in the dipole approximation as a first attempt not yet considering other contributory processes. Simulation results are proved to be in a rather good agreement with experimental data.

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