In-situ monitoring of electron cyclotron resonance plasma chemical vapour deposition of hydrogenated silicon nitride films

1993 ◽  
Vol 59 (1-3) ◽  
pp. 77-81 ◽  
Author(s):  
Mohamed Boumerzoug ◽  
Roman V. Kruzelecky ◽  
Peter Mascher ◽  
David A. Thompson
Keyword(s):  
Vapour Deposition ◽  
Electron Cyclotron Resonance ◽  
Chemical Vapour ◽  
In Situ Monitoring ◽  
Plasma Chemical ◽  
Hydrogenated Silicon ◽  
Silicon Nitride Films ◽  
Plasma Chemical Vapour Deposition ◽  
Resonance Plasma

Self assembled gold and silver nanoparticulates on silicon nanotips as surface enhanced Raman active substrates

2003 ◽  
Vol 788 ◽  
Author(s):  
S. Chattopadhyay ◽  
H. C. Lo ◽  
K. H. Chen ◽  
C. H. Hsu ◽  
L. C. Chen
Keyword(s):  
Vapour Deposition ◽  
Electron Cyclotron Resonance ◽  
Ion Beam ◽  
Chemical Vapour ◽  
Surface Enhanced Raman Spectroscopy ◽  
Plasma Chemical ◽  
Surface Enhanced ◽  
Surface Enhanced Raman ◽  
Plasma Chemical Vapour Deposition ◽  
Resonance Plasma

AbstractSilicon nanotips, grown via electron cyclotron resonance plasma chemical vapour deposition, with apex diameters of ∼2nm and lengths of 1000 nm and densities of 1011/cm2 were used as a new substrate for surface enhanced Raman spectroscopy. Ion beam sputtered gold and silver self assemble on these substrates as nanoparticulates of 4–10 nm diameter and these metallic nanoparticulates assist in the surface enhancement of Raman signals of analytes. Molecules such as Rhodamine 6G and bis-Pyridyl ethylene of varied concentrations, in the range of 10-6-10-10 M, has been studied on these substrates and enhancements in the range of 106-108 were observed.

Electron Cyclotron Resonance Plasma Chemical Vapour Deposition of Silicon Carbide Thin Films Using Ditertiary Butyl Selane

1994 ◽  
Vol 339 ◽  
Author(s):  
Mohamed Boumerzoug ◽  
Marcel Boudreau ◽  
Peter Mascher ◽  
Paul E. Jessop
Keyword(s):  
Silicon Carbide ◽  
Chemical Vapour Deposition ◽  
Cyclotron Resonance ◽  
Vapour Deposition ◽  
Electron Cyclotron Resonance ◽  
Chemical Vapour ◽  
Electron Cyclotron ◽  
Plasma Chemical ◽  
Plasma Chemical Vapour Deposition ◽  
Resonance Plasma

ABSTRACTSilicon carbide films were deposited by electron cyclotron resonance plasma chemical vapour deposition, using Ditertiary Butyl Silane (SiH2(C4H9)2), a non-corrosive organic compound, liquid at room temperature and stable in air, as precursor. Depositions were carried out in an Ar/H2 plasma at relatively low temperatures, below 400 °C. The influence of deposition parameters such as substrate temperature, gas flow rates, pressure, and microwave power, was systematically investigated and related to the Si:C ratios and the refractive index. The film composition was measured by Auger electron spectroscopy and the surface morphology was examined by scanning electron microscopy. The deposition rates and refractive indexes were extracted from the conventional ellipsometric functions, psi and delta. The results show that high quality silicon carbide of variable Si:C ratios and with very low levels of impurities are obtained.

Sign in / Sign up

Export Citation Format

Share Document