Performance Analysis of GaN/AlGaN HEMTs Passivation using Inductively Coupled Plasma Chemical Vapour Deposition and Plasma Enhanced Chemical Vapour Deposition Techniques

<p class="p1">In the present paper SiN thin film has been studied as a passivation layer and its effect on AlGaN/GaN HEMTs is investigated using two different deposition techniques i.e PECVD and ICPCVD. AlGaN/GaN HEMTs devices passivated with optimised SiN film have delivered lower gate leakage current (from μA to nA). Device source drain saturation current (I<span class="s2">ds</span>) increased from 400mA/mm to ~550 A/mm and the peak extrinsic trans-conductance increased from 100 mS/mm to 170 mS/mm for a 0.8 μm HEMT device. The optimised SiN passivation process has resulted in reduced current collapse and increased breakdown voltage for HEMT devices.<span class="Apple-converted-space"> </span></p>