Large-area coverage of high TcYBa2Cu3O7−x thin films deposited with the activated reactive evaporation technique

1993 ◽  
Vol 61 (1-3) ◽  
pp. 310-314
Author(s):  
C.H. Stoessel ◽  
R.F. Bunshah ◽  
H.J. Doerr
2011 ◽  
Vol 10 (01n02) ◽  
pp. 141-145 ◽  
Author(s):  
S. R. MEHER ◽  
KUYYADI P. BIJU ◽  
MAHAVEER K. JAIN

Indium-rich In x Ga 1-x N thin films were prepared on glass substrates by a mixed source modified activated reactive evaporation technique. All the films exhibit hexagonal wurtzite structure preferentially oriented along the c-axis. The band gap values obtained through Urbach fitting of the absorption edge were found to be in good agreement with the values obtained from photoluminescence spectra. The decrease in band gap below 1.9 eV (i.e., for pure InN ) for indium-rich films is mainly due to the compensation of Burstein–Moss shift due to gallium incorporation into the lattice which is further confirmed from the carrier concentration measurements.


1982 ◽  
Vol 6 (4) ◽  
pp. 445-453 ◽  
Author(s):  
H.S. Randhawa ◽  
R.F. Bunshah ◽  
D.G. Brock ◽  
B.M. Basol ◽  
O.M. Stafsudd

2008 ◽  
Vol 516 (12) ◽  
pp. 4351-4359 ◽  
Author(s):  
R.J. Westerwaal ◽  
C.P. Broedersz ◽  
R. Gremaud ◽  
M. Slaman ◽  
A. Borgschulte ◽  
...  

1993 ◽  
Vol 227 (1) ◽  
pp. 95-99 ◽  
Author(s):  
S. Prakash ◽  
K. Chou ◽  
H.J. Doerr ◽  
C.V. Deshpandey ◽  
R.F. Bunshah

2008 ◽  
Vol 41 (15) ◽  
pp. 155409 ◽  
Author(s):  
Kuyyadi P Biju ◽  
A Subrahmanyam ◽  
Mahaveer K Jain

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