Optical properties of low-temperature B2O3-and ZrO2-opacified glazes

1981 ◽  
Vol 7 (1) ◽  
pp. 31-35 ◽  
Author(s):  
O.S. Grum-Grzhimailo
Keyword(s):  
Optical Properties ◽  
Low Temperature

Optical properties of ZnTe nanorods synthesized via a facile low-temperature solvothermal route

2010 ◽  
Vol 171 (1-3) ◽  
pp. 11-15 ◽  
Author(s):  
Buyong Wan ◽  
Chenguo Hu ◽  
Bin Feng ◽  
Jing Xu ◽  
Yan Zhang ◽  
...  
Keyword(s):  
Optical Properties ◽  
Low Temperature ◽  
Solvothermal Route

Optical properties of quantum wells grown upon gas source molecular‐beam epitaxy low‐temperature buffers

1991 ◽  
Vol 69 (11) ◽  
pp. 7942-7944 ◽  
Author(s):  
K. T. Shiralagi ◽  
R. A. Puechner ◽  
K. Y. Choi ◽  
R. Droopad ◽  
G. N. Maracas
Keyword(s):  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Quantum Wells ◽  
Molecular Beam ◽  
Gas Source

Structural, magnetic, dielectric and optical properties of the Eu2Bi2Fe4O12 bismuth-based low-temperature biferroic

2018 ◽  
Vol 29 (24) ◽  
pp. 20942-20951
Author(s):  
J. A. Cuervo-Farfán ◽  
C. A. Parra Vargas ◽  
D. S. F. Viana ◽  
F. P. Milton ◽  
D. Garcia ◽  
...  
Keyword(s):  
Optical Properties ◽  
Low Temperature ◽  
Dielectric And Optical Properties ◽  
Magnetic Dielectric

Synthesis and Optical Properties of Nano-ZnO at Low Temperature

2018 ◽  
Vol 55 (7) ◽  
pp. 071603 ◽  
Author(s):  
王魏 Wang Wei ◽  
张富春 Zhang Fuchun ◽  
闫军锋 Yan Junfeng ◽  
李晓 Li Xiao ◽  
张雄 Zhang Xiong ◽  
...  
Keyword(s):  
Optical Properties ◽  
Low Temperature ◽  
Nano Zno

Influence of interface defects on the optical properties of InP/ZnS quantum dots by low temperature synthesis of InP core

2019 ◽  
Vol 476 ◽  
pp. 757-760 ◽  
Author(s):  
Da-Woon Jeong ◽  
Han Wook Seo ◽  
Young Tae Byun ◽  
Kyoung-Mook Lim ◽  
Eun Ju Jeon ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Low Temperature ◽  
Low Temperature Synthesis ◽  
Temperature Synthesis ◽  
Interface Defects

Spatially resolved optical emission of cubic GaN/AlN multi-quantum well structures

2014 ◽  
Vol 1736 ◽  
Author(s):  
D.J. As ◽  
R. Kemper ◽  
C. Mietze ◽  
T. Wecker ◽  
J.K.N. Lindner ◽  
...  
Keyword(s):  
Optical Properties ◽  
Low Temperature ◽  
Film Thickness ◽  
Quantum Wells ◽  
Emission Intensity ◽  
Optical Emission ◽  
Quantum Well Structures ◽  
Spatially Resolved ◽  
Scanning Transmission ◽  
Cubic Gan

ABSTRACTIn this contribution we report on the optical properties of cubic AlN/GaN asymmetric multi quantum wells (MQW) structures on 3C-SiC/Si (001) substrates grown by radio-frequency plasma-assisted molecular beam epitaxy (MBE). Scanning transmission electron microscopy (STEM) and spatially resolved cathodoluminescence (CL) at room temperature and at low temperature are used to characterize the optical properties of the cubic AlN/GaN MQW structures. An increasing CL emission intensity with increasing film thickness due to the improved crystal quality was observed. This correlation can be directly connected to the reduction of the linewidth of x-ray rocking curves with increasing film thickness of the c-GaN films. Defects like stacking faults (SFs) on the {111} planes, which also can be considered as hexagonal inclusions in the cubic crystal matrix, lead to a decrease of the CL emission intensity. With low temperature CL line scans also monolayer fluctuations of the QWs have been detected and the observed transition energies agree well with solutions calculated using a one-dimensional (1D) Schrödinger-Poisson simulator.

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