Optical properties of quantum wells grown upon gas source molecular‐beam epitaxy low‐temperature buffers

ABSTRACTIn this work we demonstrate that photopumped quantum wellheterostructure lasers with excellent optical quality can be grown ontop of a LT GaAs buffer layer by molecular beam epitaxy. Hightemperature thermal annealing of these lasers blue-shifts the laseremission wavelengths but the presence/absence of a LT GaAs layerhad little effect on the overall laser thresholds. Also, to first order itwas not necessary to include an AlAs barrier layer to preventadverse effects (as has been necessary in the gate stack of MESFETs to prevent carrier compensation).

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Interface and optical properties of InGaAsNSb∕GaAs quantum wells on GaAs (411) substrates by molecular beam epitaxy

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ◽

10.1116/1.2748411 ◽

2007 ◽

Vol 25 (4) ◽

pp. 1533 ◽

Cited By ~ 2

Author(s):

W. Li ◽

C. Pei ◽

A. Torfi ◽

D. Moscicka ◽

W. I. Wang

Keyword(s):

Optical Properties ◽

Molecular Beam Epitaxy ◽

Quantum Wells ◽

Molecular Beam

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High-Quality AlGaN/GaN Grown on Sapphire by Gas-Source Molecular Beam Epitaxy using a Thin Low-Temperature AlN Layer

MRS Proceedings ◽

10.1557/proc-595-f99w8.1 ◽

1999 ◽

Vol 595 ◽

Author(s):

M. J. Jurkovic ◽

L.K. Li ◽

B. Turk ◽

W. I. Wang ◽

S. Syed ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Low Temperature ◽

Molecular Beam ◽

Structural Characteristics ◽

High Quality ◽

Gas Source ◽

Background Doping ◽

Shubnikov De Haas Oscillations

AbstractGrowth of high-quality AlGaN/GaN heterostructures on sapphire by ammonia gassource molecular beam epitaxy is reported. Incorporation of a thin AlN layer grown at low temperature within the GaN buffer is shown to result in enhanced electrical and structural characteristics for subsequently grown heterostructures. AlGaN/GaN structures exhibiting reduced background doping and enhanced Hall mobilities (2100, 10310 and 12200 cm2/Vs with carrier sheet densities of 6.1 × 1012 cm−2, 6.0 × 1012 cm−2, and 5.8 × 1012 cm−2 at 300 K, 77 K, and 0.3 K, respectively) correlate with dislocation filtering in the thin AlN layer. Magnetotransport measurements at 0.3 K reveal well-resolved Shubnikov-de Haas oscillations starting at 3 T.

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Photoluminescence properties of GaNP/GaP multiple quantum wells grown by gas source molecular beam epitaxy

Applied Physics Letters ◽

10.1063/1.1313813 ◽

2000 ◽

Vol 77 (14) ◽

pp. 2180-2182 ◽

Cited By ~ 20

Author(s):

H. P. Xin ◽

C. W. Tu

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Wells ◽

Molecular Beam ◽

Multiple Quantum Wells ◽

Multiple Quantum ◽

Photoluminescence Properties ◽

Gas Source

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Molecular beam epitaxy growth and characterization of low-temperature InGaAs/InAlAs multiple quantum wells

High Power Laser and Particle Beams ◽

10.3788/hplpb20132506.1523 ◽

2013 ◽

Vol 25 (6) ◽

pp. 1523-1526

Author(s):

万文坚 Wan Wenjian ◽

尹嵘 Yin Rong ◽

韩英军 Han Yingjun ◽

王丰 Wang Feng ◽

郭旭光 Guo Xuguang ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Low Temperature ◽

Quantum Wells ◽

Molecular Beam ◽

Multiple Quantum Wells ◽

Molecular Beam Epitaxy Growth ◽

Multiple Quantum

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Molecular Beam Epitaxy of Znl-x Cdx Se/ZnSe Heterostructures And Their Optical Properties

MRS Proceedings ◽

10.1557/proc-228-301 ◽

1991 ◽

Vol 228 ◽

Cited By ~ 5

Author(s):

H. Luo ◽

N. Samarth ◽

J. K. Furdyna ◽

H. Jeon ◽

J. Ding ◽

...

Keyword(s):

Optical Properties ◽

Molecular Beam Epitaxy ◽

Quantum Wells ◽

Room Temperature ◽

Molecular Beam ◽

Stimulated Emission ◽

Optically Pumped ◽

Absorption Coefficients ◽

Excitonic Absorption ◽

Lasing Mechanism

ABSTRACTSuperlattices and quantum wells of Znl-xCdxSe/ZnSe, and heterostructures based on ZnSe/CdSe digital alloys have been grown by molecular beam epitaxy (MBE). Their optical properties were studied with particular emphasis on excitonic absorption and photopumped stimulated emission. Excitonic absorption is easily observable up to 400 K, and is characterized by extremely large absorption coefficients (α = 2×105cm−1). Optically pumped lasing action is obtained at room temperature with a typical threshold intensity of 100 kW/cm2. The lasing mechanism in these II-VI quantum wells appears to be quite different from that in the better studied III-V materials: in our case, the onset of stimulated emission occurs before the saturation of the excitonic absorption, and the stimulated emission occurs at an energy lower than that of the excitonic absorption.

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