Argon ion laser excitation of supersonic seeded molecular beams of I2

1983 ◽  
Vol 79 (3) ◽  
pp. 321-339 ◽  
Author(s):  
F.J. Aoiz ◽  
M.M. Oprysko ◽  
R.B. Bernstein
Keyword(s):  
Laser Excitation ◽  
Molecular Beams ◽  
Argon Ion Laser ◽  
Ion Laser ◽  
Argon Ion

Determination of Organics on Metal Surfaces by Raman Spectroscopy

1993 ◽  
Vol 47 (11) ◽  
pp. 1767-1771 ◽  
Author(s):  
Ching-Hui Tseng ◽  
Charles K. Mann ◽  
Thomas J. Vickers
Keyword(s):  
Fiber Optic ◽  
Laser Excitation ◽  
Internal Standard ◽  
Aluminum Surface ◽  
Hadamard Transform ◽  
Dimethyl Methylphosphonate ◽  
Argon Ion Laser ◽  
Ion Laser ◽  
Argon Ion

Detection limits of about 1 g/m2 are demonstrated for the Raman determination of two organic materials, polydimethylsiloxane and dimethyl methylphosphonate, on an aluminum surface. A fiber-optic-based system is used. A large sample area is scanned to overcome heterogeneity in sample coverage. Measurements are made without use of an internal standard. Results are reported for both a Hadamard transform technique with argon-ion laser excitation and a conventional spectrometer with diode laser excitation.

A Study of Measurement Interference in the Optoacoustic Detection of NO2 by Argon-Ion Laser Excitation

1982 ◽  
Vol 36 (5) ◽  
pp. 562-565 ◽  
Author(s):  
Alan Fried
Keyword(s):  
Energy Transfer ◽  
Laser Excitation ◽  
Dramatic Decrease ◽  
Argon Ion Laser ◽  
Ion Laser ◽  
Argon Ion

Optoacoustic measurements of NO2 excited by an Ar+ laser were performed in the presence of NO, N2, H2O, and O2 matrix gases. Identical sensitivities were measured in all matrix gases except O2 where energy transfer from NO2 to the metastable O2(1Δg) state resulted in a dramatic decrease in sensitivity.

Laser Induced Etching for Generation of Si Nanocrystals and Spectroscopic Investigation of Morphology

2005 ◽  
Vol 23 ◽  
pp. 43-46
Author(s):  
H.S. Mavi ◽  
S. Rath ◽  
Arun Shukla
Keyword(s):  
Quantum Confinement ◽  
Silicon Nanocrystals ◽  
Laser Wavelength ◽  
Interconnected Network ◽  
Substrate Type ◽  
Argon Ion Laser ◽  
Si Nanocrystals ◽  
Ion Laser ◽  
Laser Induced Etching ◽  
Argon Ion

Laser-induced etching of silicon is used to generate silicon nanocrystals. The pore structure depends on the substrate type and etching laser wavelength. Porous silicon (PS) samples prepared by Nd:YAG laser (1.16 eV) etching of n-type substrate showed a fairly uniform and highly interconnected network of nearly circular pores separated by thin columnar boundaries, while no circular pits were produced by argon- ion laser (2.41 eV) etching under similar conditions. The size and size distribution of the nanocrystals are investigated by Raman and photoluminescence spectroscopies and analyzed within the framework of quantum confinement models.

Electron temperatures in a segmented-metal argon-ion laser

1972 ◽  
Vol 5 (10) ◽  
pp. 1807-1814 ◽  
Author(s):  
A Maitland ◽  
J C L Cornish
Keyword(s):  
Argon Ion Laser ◽  
Ion Laser ◽  
Argon Ion

scholarly journals Spectroscopic Properties of Photoproduct of Hematoporphyrin Derivative Oligomer by Photoradiation of Argon-ion Laser

1988 ◽  
Vol 8 (4) ◽  
pp. 3-9
Author(s):  
Norio MIYOSHI ◽  
Takahiro SEKI ◽  
Shuichi KINOSHITA ◽  
Takashi KUSHIDA ◽  
Tsuyoshi NISHIZAKA ◽  
...  
Keyword(s):  
Spectroscopic Properties ◽  
Hematoporphyrin Derivative ◽  
Argon Ion Laser ◽  
Ion Laser ◽  
Argon Ion

scholarly journals Endoscopic phototherapy using argon ion laser for gastrointestinal tumors

1982 ◽  
Vol 3 (1) ◽  
pp. 35-38
Author(s):  
Masatoshi Esaki ◽  
Hideo Hiratsuka ◽  
Mamoru Hiyama ◽  
Osamu Ueda ◽  
Yukio Toda ◽  
...  
Keyword(s):  
Gastrointestinal Tumors ◽  
Argon Ion Laser ◽  
Ion Laser ◽  
Argon Ion
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