Local lattice parameter measurements in cyclically deformed copper by convergent-beam electron diffraction

1993 ◽  
Vol 51 (1-4) ◽  
pp. 136-145 ◽  
Author(s):  
H.J. Maier ◽  
H. Renner ◽  
H. Mughrabi
Keyword(s):  
Electron Diffraction ◽  
Lattice Parameter ◽  
Convergent Beam Electron Diffraction ◽  
Beam Electron ◽  
Local Lattice ◽  
Convergent Beam

Strain measurement in In0.2Ga0.8As/GaAs quantum wires by convergent beam electron diffraction

1995 ◽  
Vol 53 ◽  
pp. 444-445
Author(s):  
S. Hillyard ◽  
Y.-P. Chen ◽  
J.D. Reed ◽  
W.J. Schaff ◽  
L.F. Eastman ◽  
...  
Keyword(s):  
Electron Diffraction ◽  
Semiconductor Lasers ◽  
Quantum Wire ◽  
Quantum Wires ◽  
Convergent Beam Electron Diffraction ◽  
Zero Order ◽  
Beam Electron ◽  
Local Lattice ◽  
Device Applications ◽  
Convergent Beam

The positions of high-order Laue zone (HOLZ) lines in the zero order disc of convergent beam electron diffraction (CBED) patterns are extremely sensitive to local lattice parameters. With proper care, these can be measured to a level of one part in 104 in nanometer sized areas. Recent upgrades to the Cornell UHV STEM have made energy filtered CBED possible with a slow scan CCD, and this technique has been applied to the measurement of strain in In0.2Ga0.8 As wires.Semiconductor quantum wire structures have attracted much interest for potential device applications. For example, semiconductor lasers with quantum wires should exhibit an improvement in performance over quantum well counterparts. Strained quantum wires are expected to have even better performance. However, not much is known about the true behavior of strain in actual structures, a parameter critical to their performance.

Measurement of Thermally-Induced Strains in Polycrystalline Al Thin Films on Si Using Convergent Beam Electron Diffraction

1994 ◽  
Vol 343 ◽  
Author(s):  
S. K. Streiffer ◽  
S. Bader ◽  
C. Deininger ◽  
J. Mayer ◽  
M. Rühle
Keyword(s):  
Electron Diffraction ◽  
Ccd Camera ◽  
Lattice Parameter ◽  
Convergent Beam Electron Diffraction ◽  
Thermally Induced ◽  
Beam Electron ◽  
Texture Model ◽  
Refinement Procedure ◽  
Convergent Beam ◽  
Line Positions

ABSTRACTStrains in polycrystalline Al films grown on oxidized Si wafers were measured using convergent beam electron diffraction (CBED). CBED patterns were acquired on a Zeiss EM 912 TEM equipped with an imaging energy filter and CCD camera. HOLZ line positions in the (000) CBED disk were matched using an automated refinement procedure. A sensitivity to variations in lattice parameter of approximately 0.00007 nm was obtained. Strong deviations from a simple equibiaxial strain, perfect [111] texture model were observed.

Relative Lattice Parameter Measurement in Quaternary (InGaAsP) Layers on InP Substrates Using Convergent Beam Electron Diffraction

1986 ◽  
Vol 69 ◽  
Author(s):  
M. E. Twigg ◽  
S. N. G. Chu ◽  
D. C. Joy ◽  
D. M. Maher ◽  
A. T. Macrander ◽  
...  
Keyword(s):  
Electron Diffraction ◽  
Lattice Parameter ◽  
Convergent Beam Electron Diffraction ◽  
X Ray Diffraction ◽  
Device Structure ◽  
Beam Electron ◽  
X Ray ◽  
Convergent Beam ◽  
Relative Change ◽  
Inp Substrates

AbstractWith X-ray diffraction techniques, it is possible to routinely measure lattice parameters to several parts in 104 for macroscopic specimens. However, measurements of lattice parameter changes for quaternary (InGaAsP) device structures several microns in width are not usually feasible with X-ray diffraction techniques. Convergent Beam Electron Diffraction (CBED), which is one of the techniques available on a modern transmission electron microscope (TEM), may be sensitive to these small, localized lattice parameter changes. Unfortunately, dynamical diffraction effects prevent direct extraction of changes in the lattice parameter from CBED patterns which are obtained from high atomic number materials. For this reason, we have chosen to calibrate the relative position of CBED features with X-ray lattice parameter measurements which were obtained from planar quaternary layers grown on InP substrates. For the active quaternary region of an electro-optical device structure, it is shown that this approach may be sensitive to a relative change in the lattice parameter as small as ±2 parts in 104, which is the uncertainty in the X-ray calibration measurements.

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