Initial sticking coefficient of O2 on Ag (001)

1990 ◽  
Vol 54-55 ◽  
pp. 131-141 ◽  
Author(s):  
M. Rocca ◽  
P. Traversaro ◽  
U. Valbusa
Keyword(s):  
Sticking Coefficient ◽  
Initial Sticking

Energy and angle dependence of the initial sticking coefficient of O2 on Ag(001)

1996 ◽  
Vol 363 (1-3) ◽  
pp. 68-72 ◽  
Author(s):  
F.Buatier de Mongeot ◽  
M. Rocca ◽  
U. Valbusa
Keyword(s):  
Sticking Coefficient ◽  
Angle Dependence ◽  
Initial Sticking

Initial sticking coefficient of O2 on Ag(110)

1994 ◽  
Vol 101 (1) ◽  
pp. 713-725 ◽  
Author(s):  
L. Vattuone ◽  
M. Rocca ◽  
C. Boragno ◽  
U. Valbusa
Keyword(s):  
Sticking Coefficient ◽  
Initial Sticking

OXYGEN AND POTASSIUM ADSORPTION ON A CARBIDE-MODIFIED STEPPED-W(100) IN CONTACT WITH THE CARBON SOLID SOLUTION: AN AES AND WF STUDY AT 300 K AND AT ELEVATED TEMPERATURES

2005 ◽  
Vol 12 (05n06) ◽  
pp. 787-792
Author(s):  
S. D. FOULIAS ◽  
A. PERDIKIS ◽  
D. VLACHOS
Keyword(s):  
Solid Solution ◽  
Elevated Temperatures ◽  
Dissociative Adsorption ◽  
Dispersed Phase ◽  
Phase System ◽  
Sticking Coefficient ◽  
Two Phase ◽  
Metallic Behavior ◽  
Initial Sticking ◽  
Carbon System

The adsorption of oxygen and potassium on the two-phase system: carbide-modified stepped- W (100) surface (CMT) in contact with the solid solution of carbon in bulk tungsten, was investigated by AES and WF measurements. The CMT surface shows metallic behavior judging from its interaction with K . The expected dissociative adsorption of oxygen appears to occur with 1 - θ kinetics, possibly via a molecularly chemisorbed state. The "dispersed phase — two-phase" model is clearly applicable when oxygen adsorbs on the K -pre-covered carbide. The initial sticking coefficient of oxygen increases drastically from the dispersed to the condensed phase, at least four-fold with respect to s0 on the clean carbide. It is proposed that this two-phase carbon system can be advantageous compared with the bulk carbide since it can easily regenerate the surface if the latter is depleted from carbon.

scholarly journals Initial Sticking Coefficient of H2 on the Pd–Cu(111) Surface Alloy at very Low Coverages

2013 ◽  
Vol 0 (0) ◽  
pp. 1-10
Author(s):  
Daniel Farías ◽  
Marina Minniti ◽  
Amjad Al Taleb ◽  
Rodolfo Miranda
Keyword(s):  
Surface Alloy ◽  
Sticking Coefficient ◽  
Initial Sticking

ETHYLENE REACTIVITY WITH SILICON SURFACE

2004 ◽  
Vol 11 (01) ◽  
pp. 21-25 ◽  
Author(s):  
M.-A. ZAÏBI ◽  
J.-P. LACHARME
Keyword(s):  
Silicon Surface ◽  
Auger Electron ◽  
Low Energy ◽  
Second Step ◽  
Sticking Coefficient ◽  
Low Energy Electron Diffraction ◽  
Low Energy Electron ◽  
Electron Spectrometry ◽  
Property Changes ◽  
Initial Sticking

The clean Si (111)(7×7) surface has been exposed to ethylene ( C 2 H 4) doses, up to 7000 L (1 L =10-6 Torr ×1 s ) at most, under ultrahigh vacuum. The structural and electronic property changes of the surface have been studied by low energy electron diffraction (LEED), Auger electron spectrometry (AES) and photoemission yield spectroscopy (PYS). The interaction presents two types of kinetic adsorption, where the first is produced below 3000 L of C 2 H 4. In the first step, the ethylene molecule is adsorbed molecularly and the initial sticking coefficient S 0 is very low (S0≈2×10-3). At the saturation (≈ 5000–6000 L), the valence band is fitted by a power law (E — 4.42)2.5 eV .1,2 The surface is then a stronger scattering for photoemitted electrons. We attribute this result, produced at the second step of adsorption, to the C 2 H 4-π orbital and hydrogen liberated by this molecule, which break the Si – Si surface bonds.

Initial Sticking Coefficient of H2 on the Pd–Cu(111) Surface Alloy at very Low Coverages

2013 ◽  
Vol 227 (9-11) ◽  
Author(s):  
Daniel Farías ◽  
Marina Minniti ◽  
Amjad Al Taleb ◽  
Rodolfo Miranda
Keyword(s):  
Surface Alloy ◽  
Sticking Coefficient ◽  
Initial Sticking

scholarly journals Ripple Formation during Oblique Angle Etching

Coatings ◽  
2019 ◽  
Vol 9 (4) ◽  
pp. 272
Author(s):  
Mehmet F. Cansizoglu ◽  
Mesut Yurukcu ◽  
Tansel Karabacak
Keyword(s):  
Plasma Etching ◽  
Incidence Angle ◽  
Incident Beam ◽  
Root Mean Square Roughness ◽  
Sticking Coefficient ◽  
Oblique Angle ◽  
Nano Fabrication ◽  
Ripple Formation ◽  
Rapid Formation ◽  
Roughness Analysis

Chemical removal of materials from the surface is a fundamental step in micro- and nano-fabrication processes. In conventional plasma etching, etchant molecules are non-directional and perform a uniform etching over the surface. However, using a highly directional obliquely incident beam of etching agent, it can be possible to engineer surfaces in the micro- or nano- scales. Surfaces can be patterned with periodic morphologies like ripples and mounds by controlling parameters including the incidence angle with the surface and sticking coefficient of etching particles. In this study, the dynamic evolution of a rippled morphology has been investigated during oblique angle etching (OAE) using Monte Carlo simulations. Fourier space and roughness analysis were performed on the resulting simulated surfaces. The ripple formation was observed to originate from re-emission and shadowing effects during OAE. Our results show that the ripple wavelength and root-mean-square roughness evolved at a more stable rate with accompanying quasi-periodic ripple formation at higher etching angles (θ > 60°) and at sticking coefficient values (Sc) 0.5 ≤ Sc ≤ 1. On the other hand, smaller etching angle (θ < 60°) and lower sticking coefficient values lead to a rapid formation of wider and deeper ripples. This result of this study can be helpful to develop new surface patterning techniques by etching.

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