scholarly journals Ripple Formation during Oblique Angle Etching

Coatings ◽  
2019 ◽  
Vol 9 (4) ◽  
pp. 272
Author(s):  
Mehmet F. Cansizoglu ◽  
Mesut Yurukcu ◽  
Tansel Karabacak
Keyword(s):  
Plasma Etching ◽  
Incidence Angle ◽  
Incident Beam ◽  
Root Mean Square Roughness ◽  
Sticking Coefficient ◽  
Oblique Angle ◽  
Nano Fabrication ◽  
Ripple Formation ◽  
Rapid Formation ◽  
Roughness Analysis

Chemical removal of materials from the surface is a fundamental step in micro- and nano-fabrication processes. In conventional plasma etching, etchant molecules are non-directional and perform a uniform etching over the surface. However, using a highly directional obliquely incident beam of etching agent, it can be possible to engineer surfaces in the micro- or nano- scales. Surfaces can be patterned with periodic morphologies like ripples and mounds by controlling parameters including the incidence angle with the surface and sticking coefficient of etching particles. In this study, the dynamic evolution of a rippled morphology has been investigated during oblique angle etching (OAE) using Monte Carlo simulations. Fourier space and roughness analysis were performed on the resulting simulated surfaces. The ripple formation was observed to originate from re-emission and shadowing effects during OAE. Our results show that the ripple wavelength and root-mean-square roughness evolved at a more stable rate with accompanying quasi-periodic ripple formation at higher etching angles (θ > 60°) and at sticking coefficient values (Sc) 0.5 ≤ Sc ≤ 1. On the other hand, smaller etching angle (θ < 60°) and lower sticking coefficient values lead to a rapid formation of wider and deeper ripples. This result of this study can be helpful to develop new surface patterning techniques by etching.

Engineering Morphology of Surfaces by Oblique Angle Etching

2007 ◽  
Vol 1059 ◽  
Author(s):  
Mehmet F. Cansizoglu ◽  
Tansel Karabacak
Keyword(s):  
Self Assembly ◽  
Incidence Angle ◽  
Ion Beam ◽  
Growth Front ◽  
Oblique Angle ◽  
Etching Technique ◽  
Ripple Formation ◽  
Wide Range ◽  
Engineering Morphology ◽  
Shadowing Effect

ABSTRACTDuring a typical chemical etching process growth front morphology generally generates an isotropic rough surface. In this work, we show that it is possible to form a rippled surface morphology through a geometrical self-assembly process using a chemical oblique angle etching technique. We observe in our Monte Carlo simulations that obliquely incident reactive species preferentially etch the hills that are exposed to the beam direction due to the shadowing effect. In addition, species with non-unity sticking (etching) coefficients can be re-emitted from the side walls of the hills and etch the valleys, which at the end can lead to the formation of ripples along the direction of the beam. This mechanism is quite different than the previously reported ripple formation during ion-beam bombarded surfaces where the particles have much higher energies, lower incidence angle and ripple formation is mainly due to physical deformation of the surface. We investigate the ripple formation process in our simulated surfaces for a wide range of etching angle and sticking coefficient values.

Generalized grazing-incidence-angle X-ray diffraction (G-GIXD) using image plates

1998 ◽  
Vol 5 (3) ◽  
pp. 488-490 ◽  
Author(s):  
Yasuo Takagi ◽  
Masao Kimura
Keyword(s):  
Incidence Angle ◽  
Incident Beam ◽  
Grazing Incidence ◽  
X Rays ◽  
X Ray Diffraction ◽  
X Ray ◽  
Surface And Interface ◽  
Out Of Plane ◽  
Grazing Incidence Angle ◽  
Interface Layers

A new and more `generalized' grazing-incidence-angle X-ray diffraction (G-GIXD) method which enables simultaneous measurements both of in- and out-of-plane diffraction images from surface and interface structures has been developed. While the method uses grazing-incidence-angle X-rays like synchrotron radiation as an incident beam in the same manner as in `traditional' GIXD, two-dimensional (area) detectors like image plates and a spherical-type goniometer are used as the data-collection system. In this way, diffraction images both in the Seemann–Bohlin (out-of-plane) and GIXD geometry (in-plane) can be measured simultaneously without scanning the detectors. The method can be applied not only to the analysis of the in-plane crystal structure of epitaxically grown thin films, but also to more general research topics like the structural analysis of polycrystalline mixed phases of thin surface and interface layers.

Depth profiling of Fe-implanted Si(100) by means of X-ray reflectivity and extremely asymmetric X-ray diffraction

2013 ◽  
Vol 46 (2) ◽  
pp. 505-511 ◽  
Author(s):  
B. Khanbabaee ◽  
A. Biermanns ◽  
S. Facsko ◽  
J. Grenzer ◽  
U. Pietsch
Keyword(s):  
Surface Density ◽  
Incidence Angle ◽  
Ion Beam ◽  
Subsurface Layer ◽  
Depth Profiling ◽  
Dynamical Theory ◽  
X Ray Diffraction ◽  
X Ray ◽  
Ripple Formation ◽  
Scattering Geometry

This article reports on surface density variations that are accompanied by ion-beam-induced pattern formation processes on Si. The density profiles perpendicular to Si(100) surfaces were investigated after off-normal implantation with 5 keV Fe+ions at fluences ranging from 1 × 1016to 5 × 1017 ions cm−2. Ripple formation was observed for ion fluences above 1 × 1016 ions cm−2. X-ray reflectivity (XRR) revealed the formation of a nanometre subsurface layer with incorporated Fe. Using XRR, no major dependence of the surface density on the ion fluence could be found. In order to improve the surface sensitivity, extremely asymmetric X-ray diffraction was applied. Depth profiling was achieved by measuring X-ray rocking curves as a function of the decreasing incidence angle down to 0° using this noncoplanar scattering geometry. The density information was extracted from the dynamical Bragg shift of the diffraction peak caused by refraction of the X-ray beam at the air–sample interface. Simulations based on the dynamical theory of X-ray diffraction revealed a decrease of density for increasing ion fluence in a region close to the surface, caused by the amorphization and surface roughening.

Determination of depth gradients of grain interaction and stress in Cu thin films

2008 ◽  
Vol 41 (6) ◽  
pp. 1067-1075 ◽  
Author(s):  
M. Wohlschlögel ◽  
W. Baumann ◽  
U. Welzel ◽  
E. J. Mittemeijer
Keyword(s):  
Residual Stress ◽  
Incidence Angle ◽  
Incident Beam ◽  
Angle Measurement ◽  
Grain Interaction ◽  
Low Incidence ◽  
Depth Gradients ◽  
Sputter Deposited ◽  
Cu Thin Film

Grain-interaction and residual stress depth gradients in a sputter-deposited Cu thin film (thickness 4 µm) were determined by employing X-ray diffraction stress measurements at constant information depths in the range between 200 and about 1500 nm. A novel procedure, which allows the determination of an effective grain-interaction parameter on the basis of thef(ψ,hkl) method and the Voigt and Reuss models of elastic grain interaction, was used. The range of accessible penetration depths was maximized by employing different photon energies using a laboratory diffractometer with Cu Kα radiation and a diffractometer at a synchrotron beamline. The variation of grain interaction with depth could be successfully related to the microstructure of the specimen. The tensile residual stress in the film parallel to its surface decreases with decreasing depth. By measuring the lattice spacing for several reflections at one penetration depth with two different photon energies (i.e.using small and large incident beam angles) it was found that the surface roughness of the specimen counteracts the effect of beam refraction to some degree. As a consequence, irrespective of whether a refraction correction is applied or neglected for the low-incidence angle measurement, erroneous results are obtained for lattice spacings derived from reflections at small incidence angles; reliable grain-interaction and stress analysis requires measurements at high incidence angle.

scholarly journals Ripple formation on Si surfaces during plasma etching in Cl2

AIP Advances ◽  
2018 ◽  
Vol 8 (5) ◽  
pp. 055027 ◽  
Author(s):  
Nobuya Nakazaki ◽  
Haruka Matsumoto ◽  
Soma Sonobe ◽  
Takumi Hatsuse ◽  
Hirotaka Tsuda ◽  
...  
Keyword(s):  
Plasma Etching ◽  
Ripple Formation

scholarly journals Origin of plasma-induced surface roughening and ripple formation during plasma etching: The crucial role of ion reflection

2018 ◽  
Vol 124 (14) ◽  
pp. 143301 ◽  
Author(s):  
Takumi Hatsuse ◽  
Nobuya Nakazaki ◽  
Hirotaka Tsuda ◽  
Yoshinori Takao ◽  
Koji Eriguchi ◽  
...  
Keyword(s):  
Plasma Etching ◽  
Crucial Role ◽  
Surface Roughening ◽  
Ripple Formation

scholarly journals A Novel Theory for the Scattering of P-Polarized Hermite-Gaussian Electromagnetic Beams by a Double Metallic Nano-Slit

2019 ◽  
Vol 11 (4) ◽  
pp. 1
Author(s):  
I. Guzman-Montano ◽  
G. Montiel-Gonzalez ◽  
J. Sumaya-Martinez ◽  
P. Rosendo-Francisco ◽  
J. Reyes-Gomez
Keyword(s):  
Incidence Angle ◽  
Incident Beam ◽  
Gaussian Beams ◽  
Geometrical Parameters ◽  
Far Field ◽  
Scalar Property ◽  
Incident Wavelength ◽  
Novel Theory ◽  
Diffraction Region ◽  
Electromagnetic Beams

We present a rigorous theory for oblique incident Hermite-Gaussian beams, diffracted by two optical nano-slits of width l and separation d, in a thick metallic screen for the case of polarization TM (P). The far field spectra as a function of several opto-geometrical parameters, wavelength &lambda; , slit width l, separation d , incidence angle &theta;i &nbsp;and Hermite order m &nbsp;is analyzed. In the vectorial diffraction region given when &lambda; /l &gt;0.2, where l is the incident wavelength and as a function of the separation between slits d; we have numerically analyzed: the far field spectra, the energy diffracted along the incident beam direction Ei , and the validity of an approximate diffraction (scalar) property, namely Ei= Ntao/lambda . &nbsp;

scholarly journals Formation of nanoripples on ZnO flat substrates and nanorods by gas cluster ion bombardment

2020 ◽  
Vol 11 ◽  
pp. 383-390 ◽  
Author(s):  
Xiaomei Zeng ◽  
Vasiliy Pelenovich ◽  
Bin Xing ◽  
Rakhim Rakhimov ◽  
Wenbin Zuo ◽  
...  
Keyword(s):  
Single Crystal ◽  
Incidence Angle ◽  
Ion Bombardment ◽  
Cluster Ions ◽  
Cluster Beam ◽  
Aeolian Sand ◽  
Sand Ripples ◽  
Ripple Formation ◽  
Irradiate Single Crystal ◽  
Cluster Ion

In the present study Ar+ cluster ions accelerated by voltages in the range of 5–10 kV are used to irradiate single crystal ZnO substrates and nanorods to fabricate self-assembled surface nanoripple arrays. The ripple formation is observed when the incidence angle of the cluster beam is in the range of 30–70°. The influence of incidence angle, accelerating voltage, and fluence on the ripple formation is studied. Wavelength and height of the nanoripples increase with increasing accelerating voltage and fluence for both targets. The nanoripples formed on the flat substrates remind of aeolian sand ripples. The ripples formed at high ion fluences on the nanorod facets resemble well-ordered parallel steps or ribs. The more ordered ripple formation on nanorods can be associated with the confinement of the nanorod facets in comparison with the quasi-infinite surface of the flat substrates.

Surface morphology evolution during plasma etching of silicon: roughening, smoothing and ripple formation

2017 ◽  
Vol 50 (41) ◽  
pp. 414001 ◽  
Author(s):  
Kouichi Ono ◽  
Nobuya Nakazaki ◽  
Hirotaka Tsuda ◽  
Yoshinori Takao ◽  
Koji Eriguchi
Keyword(s):  
Surface Morphology ◽  
Plasma Etching ◽  
Morphology Evolution ◽  
Ripple Formation ◽  
Surface Morphology Evolution
Sign in / Sign up

Export Citation Format

Share Document