Degradation of the performance of Cu2S/CdS solar cells due to a two-way solid state diffusion process

Solar Cells ◽  
1983 ◽  
Vol 9 (3) ◽  
pp. 215-228 ◽  
Author(s):  
K. Moitra ◽  
S. Deb
Keyword(s):  
Solar Cells ◽  
Solid State ◽  
Diffusion Process ◽  
Solid State Diffusion ◽  
State Diffusion

GaAs shallow homojunction solar cells fabricated on thin epitaxial films by a simple Zn solid state diffusion method

1986 ◽  
Vol 14 (1) ◽  
pp. 29-49 ◽  
Author(s):  
M. Garozzo ◽  
A. Parretta ◽  
G. Maletta ◽  
V. Adoncecchi ◽  
M. Gentili
Keyword(s):  
Solar Cells ◽  
Solid State ◽  
Epitaxial Films ◽  
Diffusion Method ◽  
Solid State Diffusion ◽  
State Diffusion

Superconducting properties of Nb3(Sn1−xGax) by a solid‐state diffusion process

1976 ◽  
Vol 28 (12) ◽  
pp. 738-740 ◽  
Author(s):  
O. Horigami ◽  
Thomas Luhman ◽  
C. S. Pande ◽  
M. Suenaga
Keyword(s):  
Solid State ◽  
Diffusion Process ◽  
Solid State Diffusion ◽  
Superconducting Properties ◽  
State Diffusion

Growth of Silicon Carbide Filaments in Multicrystalline Silicon for Solar Cells

2009 ◽  
Vol 156-158 ◽  
pp. 35-40 ◽  
Author(s):  
Hans Joachim Möller ◽  
Claudia Funke ◽  
Jan Bauer ◽  
S. Köstner ◽  
H. Straube ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Solar Cells ◽  
Solid State ◽  
Grain Boundaries ◽  
Bulk Material ◽  
Casting Process ◽  
Carbon Diffusion ◽  
Solid State Diffusion ◽  
State Diffusion ◽  
Solid Liquid Interface

This work introduces two different approaches to explain the growth of silicon carbide (SiC) filaments, found in the bulk material and in grain boundaries of solar cells made from multicrystalline (mc) silicon. These filaments are responsible for ohmic shunts. The first model proposes that the SiC filaments grow at the solid-liquid interface of the mc-Si ingot, whereas the second model proposes a growth due to solid state diffusion of carbon atoms in the solid fraction of the ingot during the block-casting process. The melt interface model can explain quantitatively the observed morphologies, diameters and mean distances of SiC filaments. The modeling of the temperature- and time-dependent carbon diffusion to a grain boundary in the cooling ingot shows that solid state diffusion based on literature data is not sufficient to transport the required amount of approximately 3.4  1017 carbon atoms per cm2 to form typical SiC filaments found in grain boundaries of mc-Si for solar cells. However, possible mechanisms are discussed to explain an enhanced diffusion of carbon to the grain boundaries.

scholarly journals SUBSTITUTION OF TRANSITION METAL ION ON MAGNETIC BEHAVIOR of CA0.5SR0.5MEXFE12-2XO19 BY SOLID STATE DIFFUSION PROCESS

2015 ◽  
Author(s):  
M. N. Giriya, C. L. Khobaragade, D. S. Bhowmick, K. G. Rew M. N. Giriya, C. L. Khobaragade, D. S. Bhowmick, K. G. Rew ◽  
Keyword(s):  
Solid State ◽  
Transition Metal ◽  
Diffusion Process ◽  
Metal Ion ◽  
Magnetic Behavior ◽  
Solid State Diffusion ◽  
Transition Metal Ion ◽  
State Diffusion

Joining of Ti3SiC2 with Ti–6Al–4V Alloy

2002 ◽  
Vol 17 (1) ◽  
pp. 52-59 ◽  
Author(s):  
N.F. Gao ◽  
Y. Miyamoto
Keyword(s):  
Solid State ◽  
Rate Constant ◽  
Liquid State ◽  
Parabolic Rate Constant ◽  
Diffusion Path ◽  
Solid State Diffusion ◽  
Diffusion Controlled ◽  
State Diffusion ◽  
Rate Controlled ◽  
Higher Temperature

The joining of a Ti3SiC2 ceramic with a Ti–6Al–4V alloy was carried out at the temperature range of 1200–1400 °C for 15 min to 4 h in a vacuum. The total diffusion path of joining was determined to be Ti3SiC2/Ti5Si3Cx/Ti5Si3Cx + TiCx/TiCx/Ti. The reaction was rate controlled by the solid-state diffusion below 1350 °C and turned to the liquid-state diffusion controlled with a dramatic increase of parabolic rate constant Kp when the temperature exceeded 1350 °C. The TiCx tended to grow at the boundarywith the Ti–6Al–4V alloy at a higher temperature and longer holding time. TheTi3SiC2/Ti–6Al–4V joint is expected to be applied to implant materials.

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