Effect of nonparabolicity on free-carrier absorption in degenerate n-type indium antimonide in quantizing magnetic fields

1992 ◽  
Vol 176 (1-2) ◽  
pp. 159-164 ◽  
Author(s):  
Chhi-Chong Wu ◽  
Jensan Tsai ◽  
Chau-Jy Lin
Keyword(s):  
Magnetic Fields ◽  
Indium Antimonide ◽  
Free Carrier ◽  
Free Carrier Absorption ◽  
Carrier Absorption

Free-carrier absorption in quantizing magnetic fields

1979 ◽  
Vol 20 (12) ◽  
pp. 5162-5167 ◽  
Author(s):  
Edward R. Generazio ◽  
Harold N. Spector
Keyword(s):  
Magnetic Fields ◽  
Free Carrier ◽  
Free Carrier Absorption ◽  
Carrier Absorption

Free-carrier absorption inn-type gallium arsenide in quantizing magnetic fields

1991 ◽  
Vol 43 (9) ◽  
pp. 7328-7331 ◽  
Author(s):  
Chhi-Chong Wu ◽  
Jensan Tsai ◽  
Chau-Jy Lin
Keyword(s):  
Gallium Arsenide ◽  
Magnetic Fields ◽  
Free Carrier ◽  
Free Carrier Absorption ◽  
Carrier Absorption

Nonlinear Laser Melting Of Indium Antimonide And Silicon

1983 ◽  
Vol 13 ◽  
Author(s):  
Michael P. Hasselbeck ◽  
H. S. Kwok
Keyword(s):  
Indium Antimonide ◽  
Laser Light ◽  
Free Carrier ◽  
Photon Absorption ◽  
Free Carrier Absorption ◽  
Two Photon Absorption ◽  
Free Carriers ◽  
Two Photon ◽  
Avalanche Ionization ◽  
Carrier Absorption

ABSTRACTPulsed 10.6μm TEA CO2 laser light has been used to melt the semiconductors silicon and InSb. Measurements indicate that generation of free carriers necessary for melting may take place by nonlinear processes such as two-photon absorption or intraband avalanche ionization. If the semiconductor is sufficiently doped, melting may also result from linear free carrier absorption. In all cases, it appears that the molten depth exceeds several μm, which is much greater than obtained with lasers of shorter wavelength.

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