Nonlinear Laser Melting Of Indium Antimonide And Silicon
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ABSTRACTPulsed 10.6μm TEA CO2 laser light has been used to melt the semiconductors silicon and InSb. Measurements indicate that generation of free carriers necessary for melting may take place by nonlinear processes such as two-photon absorption or intraband avalanche ionization. If the semiconductor is sufficiently doped, melting may also result from linear free carrier absorption. In all cases, it appears that the molten depth exceeds several μm, which is much greater than obtained with lasers of shorter wavelength.
2007 ◽
Vol 25
(9)
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pp. 2495-2501
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2011 ◽
Vol 20
(03)
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pp. 357-366
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