Zero-temperature phase diagram of the one-dimensional t−J model

1994 ◽  
Vol 199-200 ◽  
pp. 322-324 ◽  
Author(s):  
C.Stephen Hellberg ◽  
E.J. Mele
2012 ◽  
Vol 26 (03) ◽  
pp. 1150014 ◽  
Author(s):  
AZER KERIMOV

A zero-temperature phase-diagram of the one-dimensional ferromagnetic Ising model is investigated. It is shown that at zero temperature spins of any compact collection of lattice points with identically oriented external field are identically oriented.


1995 ◽  
Vol 09 (12) ◽  
pp. 1503-1514 ◽  
Author(s):  
F.D. BUZATU

The ground-state instabilities for a one-dimensional lattice system of electrons with onsite (Hubbard) and bond-site (hopping) interactions are analyzed in a perturbative approach. The zero temperature phase diagram at different band fillings is drawn; an attractive (repulsive) bond-site interaction favors the appearance of a superconductor state at low concentrations of electrons (holes). A comparison with the exact results for the Hubbard model and previous works for particular cases is also discussed.


2013 ◽  
Vol 25 (44) ◽  
pp. 445011 ◽  
Author(s):  
C Carbonell-Coronado ◽  
F De Soto ◽  
C Cazorla ◽  
J Boronat ◽  
M C Gordillo

2016 ◽  
Vol 18 (44) ◽  
pp. 30686-30695 ◽  
Author(s):  
Pablo Rivero ◽  
Claudio Cazorla

By using first-principles methods based on density functional theory we revisited the zero-temperature phase diagram of stoichiometric SrCoO3, a ferromagnetic metallic perovskite that undergoes significant structural, electronic, and magnetic changes as its content of oxygen is decreased.


1995 ◽  
Vol 52 (3) ◽  
pp. 1631-1639 ◽  
Author(s):  
Per Söderlind ◽  
Börje Johansson ◽  
Olle Eriksson

2012 ◽  
Vol 85 (6) ◽  
Author(s):  
O. N. Osychenko ◽  
G. E. Astrakharchik ◽  
F. Mazzanti ◽  
J. Boronat

1999 ◽  
Vol 52 (5) ◽  
pp. 779
Author(s):  
D. Neilson ◽  
J. S. Thakur

We find in 2D electron layers in quantum transistors that the interplay between the electron correlations and their interactions with defects in the semiconductor substrate generates a continuous localisation–delocalisation transition for intermediate electron densities (5 ≲ rs ≲ 9). We distinguish this transition from the discontinuous metal–insulator transition which is observed at lower electron densities (rs ≳ 10). The approach we use is based on the behaviour of electrons at low densities. We take into account the interactions between electrons and also their interactions with disorder. We determine a zero temperature phase diagram of localised and delocalised states as a function of electron and impurity densities. The phase boundary of the continuous transition is determined by the localisation length of the electrons.


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