Characteristics of planar tunneling junctions on BSCCO crystal oxygen ion beam irradiation effect

1996 ◽  
Vol 261 (3-4) ◽  
pp. 302-308 ◽  
Author(s):  
Hironaru Murakami ◽  
Shin-ichi Hiramatsu ◽  
Ryozo Aoki
2003 ◽  
Vol 16 (3-4) ◽  
pp. 505-508 ◽  
Author(s):  
Y. Murakami ◽  
H. Kido ◽  
A. Kenjo ◽  
T. Sadoh ◽  
T. Yoshitake ◽  
...  

2014 ◽  
Vol 778-780 ◽  
pp. 1170-1173 ◽  
Author(s):  
Motochika Okano ◽  
Daiki Edamoto ◽  
Kentaro Uchida ◽  
Ichiro Omura ◽  
Tomonori Ikari ◽  
...  

We investigated the effect of ion-beam irradiation of the 3C-SiC(111) surface on the growth of graphene by the SiC surface-decomposition method. When a 3C-SiC(111) surface was irradiated by 1 keV Ar+ions at a dose of 4.5 × 1015cm2in an ultra-high-vacuum chamber and then annealed at 1200 °C for 1 min, the formation of graphene layers was promoted in comparison with that in the absence of ion-beam irradiation. X-ray photoelectron spectroscopy studies showed that Ar ion bombardment of the 3C-SiC(111) caused breakage of surface bonds and helped Si atoms to desorb from the surface.


1995 ◽  
Vol 55 (1) ◽  
pp. 99-105 ◽  
Author(s):  
X. L. Xu ◽  
J. Y. Dolveck ◽  
G. Boiteux ◽  
M. Escoubes ◽  
M. Monchanin ◽  
...  

2014 ◽  
Vol 57 (5) ◽  
pp. 182-184
Author(s):  
Kotaro SEO ◽  
Sohei TAKAMATSU ◽  
Toshinori KONDO ◽  
Tomonori IKARI ◽  
Masamichi NAITOH

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