Raman scattering on YBa2Cu3O7−δ single crystals with variable oxygen content

1993 ◽  
Vol 195 ◽  
pp. 359-362 ◽  
Author(s):  
A. Sacuto ◽  
M. Balkanski ◽  
O. Gorochov ◽  
R. Suryanarayanan
1999 ◽  
Vol 574 ◽  
Author(s):  
V. B. Podobedov ◽  
A. Weber ◽  
G. Dezanneau ◽  
S. Pignard ◽  
J. Kreizel ◽  
...  

AbstractRaman scattering from LayRxMnO3-δ compounds (single crystals, ceramics, films) was studied as a function of kind (R) and amount (x) of dopant as well as of oxygen deficit (δ). For x = 0.1 to 0.55, a nearly linear Raman shift of the Ag mode from 240 to 125 cm−1 was observed in Srdoped compounds. While the intensity of disorder-induced Raman bands was found to be sensitive to the oxygen content, the symmetry allowed related Raman modes exhibit the changes in the frequency. As an indication of deposition conditions, lowering of a symmetry of the film structures with respect to single crystals and ceramics was detected. We discuss the physical nature of the observed effects and show how Raman data can be used for the optical characterization of manganite samples.


Author(s):  
Y. Feng ◽  
X. Y. Cai ◽  
R. J. Kelley ◽  
D. C. Larbalestier

The issue of strong flux pinning is crucial to the further development of high critical current density Bi-Sr-Ca-Cu-O (BSCCO) superconductors in conductor-like applications, yet the pinning mechanisms are still much debated. Anomalous peaks in the M-H (magnetization vs. magnetic field) loops are commonly observed in Bi2Sr2CaCu2Oy (Bi-2212) single crystals. Oxygen vacancies may be effective flux pinning centers in BSCCO, as has been found in YBCO. However, it has also been proposed that basal-plane dislocation networks also act as effective pinning centers. Yang et al. proposed that the characteristic scale of the basal-plane dislocation networksmay strongly depend on oxygen content and the anomalous peak in the M-H loop at ˜20-30K may be due tothe flux pinning of decoupled two-dimensional pancake vortices by the dislocation networks. In light of this, we have performed an insitu observation on the dislocation networks precisely at the same region before and after annealing in air, vacuumand oxygen, in order to verify whether the dislocation networks change with varying oxygen content Inall cases, we have not found any noticeable changes in dislocation structure, regardless of the drastic changes in Tc and the anomalous magnetization. Therefore, it does not appear that the anomalous peak in the M-H loops is controlled by the basal-plane dislocation networks.


2006 ◽  
Vol 32 (6) ◽  
pp. 571-575 ◽  
Author(s):  
M. A. Obolenskii ◽  
R. V. Vovk ◽  
A. V. Bondarenko ◽  
N. N. Chebotaev

1998 ◽  
Vol 40 (3) ◽  
pp. 367-376 ◽  
Author(s):  
M. F. Limonov ◽  
A. I. Rykov ◽  
S. Tajima ◽  
A. Yamanaka

1995 ◽  
Vol 246 (1-2) ◽  
pp. 176-182 ◽  
Author(s):  
V.N. Denisov ◽  
A.N. Ivlev ◽  
B.N. Mavrin ◽  
K. Yakushi ◽  
J. Dong ◽  
...  

2015 ◽  
Vol 644 ◽  
pp. 854-861 ◽  
Author(s):  
I. Jankowska-Sumara ◽  
M. Ptak ◽  
M. Mączka ◽  
A. Majchrowski ◽  
T.H. Kim ◽  
...  

2001 ◽  
Vol 364-365 ◽  
pp. 320-325 ◽  
Author(s):  
N Koshizuka ◽  
A.K Pradhan ◽  
S Shibata ◽  
Y Feng ◽  
T Machi ◽  
...  

1990 ◽  
pp. 581-584
Author(s):  
M. Yoshida ◽  
S. Gotoh ◽  
T. Takata ◽  
N. Koshizuka

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