Monte Carlo simulation of a two-species diffusive lattice gas in optimized C∗ on the connection machine. Metal-ion doping effects in the high-temperature superconductor YBa2Cu3 − yMyO6 + x (M = Co, Fe, Al)

1994 ◽  
Vol 3 (1) ◽  
pp. 9-20 ◽  
Author(s):  
Stephan Mannstaedt ◽  
Thomas Fiig ◽  
Niels Hessel Andersen ◽  
Per-Anker Lindgård ◽  
Ole G. Mouritsen
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
High Temperature ◽  
Metal Ion ◽  
High Temperature Superconductor ◽  
Lattice Gas ◽  
Connection Machine ◽  
Doping Effects ◽  
Ion Doping

43Ca NMR study of the doping effects in the high temperature superconductor (La1–xCax)(Ba1.75–xLa0.25+x)Cu3Oy

2001 ◽  
Vol 4 (11) ◽  
pp. 819-824
Author(s):  
Sébastien Marchand ◽  
Arlette Trokiner ◽  
Andrey Yakubovskii ◽  
Philippe Monod ◽  
Arkady Knizhnik ◽  
...  
Keyword(s):  
High Temperature ◽  
High Temperature Superconductor ◽  
Nmr Study ◽  
Doping Effects

A Monte Carlo Simulation of the High-Temperature Phases of Poly(p-hydroxybenzoic acid)

1995 ◽  
Vol 28 (21) ◽  
pp. 7075-7084 ◽  
Author(s):  
Stephen H. Foulger ◽  
Gregory C. Rutledge
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
High Temperature ◽  
Hydroxybenzoic Acid

Lattice-Gas Interface Structure: A Monte Carlo Simulation

1973 ◽  
Vol 30 (13) ◽  
pp. 601-603 ◽  
Author(s):  
H. J. Leamy ◽  
G. H. Gilmer ◽  
K. A. Jackson ◽  
P. Bennema
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Lattice Gas ◽  
Interface Structure

The Effect of Compound Composition and Strain on Vacancies in Si/SiGe Heterostructures

2005 ◽  
Vol 108-109 ◽  
pp. 457-462 ◽  
Author(s):  
Mariya G. Ganchenkova ◽  
V.A. Borodin ◽  
S. Nicolaysen ◽  
Risto M. Nieminen
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
High Temperature ◽  
Ab Initio Calculations ◽  
Formation Energy ◽  
Lattice Parameter ◽  
Vacancy Formation Energy ◽  
Vacancy Formation ◽  
Parameter Mismatch ◽  
Elastic Strains

In this paper we study the effect of chemical environment and elastic strains, which can arise in layered heterostructures due to the lattice parameter mismatch, on the vacancy formation energy in random Si-Ge compounds. Ab initio calculations demonstrate a number of simple trends characterizing the vacancy formation energy dependence on vacancy charge, the number of Ge atoms in its neighbourhood and on the magnitude of elastic strains. The obtained parameters of vacancy-germanium interaction indicate, in particular, a tendency for preferential vacancy accumulation in SiGe region of Si/SiGe/Si layered structures, which is confirmed here by Monte- Carlo simulation of high-temperature vacancy annealing and agrees well with recent experimental observations.

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