Monte Carlo Simulation of Polymer High-Temperature Degradation and Fracture

1995 ◽  
pp. 155-165 ◽  
Author(s):  
N. Rapoport ◽  
A. A. Efros
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
High Temperature

A Monte Carlo Simulation of the High-Temperature Phases of Poly(p-hydroxybenzoic acid)

1995 ◽  
Vol 28 (21) ◽  
pp. 7075-7084 ◽  
Author(s):  
Stephen H. Foulger ◽  
Gregory C. Rutledge
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
High Temperature ◽  
Hydroxybenzoic Acid

The Effect of Compound Composition and Strain on Vacancies in Si/SiGe Heterostructures

2005 ◽  
Vol 108-109 ◽  
pp. 457-462 ◽  
Author(s):  
Mariya G. Ganchenkova ◽  
V.A. Borodin ◽  
S. Nicolaysen ◽  
Risto M. Nieminen
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
High Temperature ◽  
Ab Initio Calculations ◽  
Formation Energy ◽  
Lattice Parameter ◽  
Vacancy Formation Energy ◽  
Vacancy Formation ◽  
Parameter Mismatch ◽  
Elastic Strains

In this paper we study the effect of chemical environment and elastic strains, which can arise in layered heterostructures due to the lattice parameter mismatch, on the vacancy formation energy in random Si-Ge compounds. Ab initio calculations demonstrate a number of simple trends characterizing the vacancy formation energy dependence on vacancy charge, the number of Ge atoms in its neighbourhood and on the magnitude of elastic strains. The obtained parameters of vacancy-germanium interaction indicate, in particular, a tendency for preferential vacancy accumulation in SiGe region of Si/SiGe/Si layered structures, which is confirmed here by Monte- Carlo simulation of high-temperature vacancy annealing and agrees well with recent experimental observations.

Comparative Characteristics of GaAs and InAs Langmuir Evaporation - Monte Carlo Simulation

2018 ◽  
Vol 386 ◽  
pp. 27-32 ◽  
Author(s):  
Anna A. Spirina ◽  
Igor Neizvestny ◽  
Nataliya L. Shwartz
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
High Temperature ◽  
Surface Morphology ◽  
Indium Arsenide ◽  
Transformation Kinetic ◽  
High Temperature Annealing ◽  
Vicinal Surface ◽  
Evaporation Temperature ◽  
Terrace Width

The process of GaAs and InAs substrates high-temperature annealing under the Langmuir evaporation conditions is studied by Monte Carlo simulation. The temperature range of gallium arsenide and indium arsenide congruent and incongruent evaporation are determined. It was demonstrated that the congruent evaporation temperature Tc is sensitive to the vicinal surface terrace width. The decrease of the terrace width results in a decrease in the congruent evaporation temperature. The Ga and In diffusion lengths along the (111)A and (111)B surfaces at congruent temperatures are estimated. The surface morphology transformation kinetic during high-temperature annealing is analyzed.

Towards a Monte Carlo simulation of a pebble bed type high temperature gas cooled reactor using Geant4

2021 ◽  
pp. 108868
Author(s):  
A.C. Cilliers ◽  
S.H. Connell ◽  
J. Conradie ◽  
M.N.H. Cook ◽  
M. Laassiri ◽  
...  
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
High Temperature ◽  
Pebble Bed ◽  
High Temperature Gas
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