The radiation-induced solid phase graft copolymerization of NMA onto natural silk fabric

1992 ◽  
Vol 40 (1) ◽  
pp. 71-74
Author(s):  
Zhong Guangxiang ◽  
Zhuo Dunwen ◽  
Jin Xiaoyan
Keyword(s):  
Graft Copolymerization ◽  
Solid Phase ◽  
Silk Fabric ◽  
Natural Silk ◽  
Radiation Induced

Radiation Induced Graft Copolymerization of Vinyl Acetate and Isopropenyl Acetate Onto Isotactic Polypropylene

1996 ◽  
Vol 61 (2) ◽  
pp. 259-267 ◽  
Author(s):  
Bhupendra N. Misra ◽  
G. S. Chauhan ◽  
Inderjeet Kaur
Keyword(s):  
Vinyl Acetate ◽  
Isotactic Polypropylene ◽  
Graft Copolymerization ◽  
Optimum Conditions ◽  
Reaction Parameters ◽  
Maximum Percentage ◽  
Radiation Induced ◽  
Isopropenyl Acetate

Radiation-induced graft copolymerization of vinyl acetate (VAC) and isopropenyl acetate (PAC) onto isotactic polypropylene (IPP) has been studied. The percentage of grafting was calculated for various reaction parameters, and the optimum conditions for attaining the maximum percentage of grafting were determined. Maximal achieved extents of grafting are 39% and 29% for VAC and PAC, respectively. The reactivity of the two monomers with respect to grafting is discussed.

Synthesis and characterization of SPE membrane based on sulfonated FEP-g-acrylic acid by radiation induced graft copolymerization for PEM fuel cell

2004 ◽  
Vol 15 (5) ◽  
pp. 270-274 ◽  
Author(s):  
M. Patri ◽  
Varsha R. Hande ◽  
Swati Phadnis ◽  
B. Somaiah ◽  
Suhasini Roychoudhury ◽  
...  
Keyword(s):  
Fuel Cell ◽  
Acrylic Acid ◽  
Graft Copolymerization ◽  
Pem Fuel Cell ◽  
Synthesis And Characterization ◽  
Radiation Induced

Defect Reduction and Defect Engineering in Silicon-on-Sapphire Material Using Ge Implantation

1990 ◽  
Vol 201 ◽  
Author(s):  
F. Namavar ◽  
E. Cortesi ◽  
N. M. Kalkhoran ◽  
J. M. Manke ◽  
B. L. Buchanan
Keyword(s):  
Leakage Current ◽  
Defect Density ◽  
Solid Phase ◽  
Substantial Reduction ◽  
Interface Region ◽  
Radiation Environment ◽  
Solid Phase Epitaxy ◽  
Defect Reduction ◽  
Radiation Induced

AbstractSubstantial reduction of defect density in silicon-on-sapphire (SOS) material is required to broaden its range of applications to include CMOS and bipolar devices. In recent years, solid phase epitaxy and regrowth (SPEAR) and double solid phase epitaxy (DSPE) processes were applied to SOS to reduce the density of defects in the silicon. These methods result in improved carrier mobilities, but also in increased leakage current, even before irradiation. In a radiation environment, this material has a large increase in radiation induced back channel leakage current as compared to standard wafers. In other words, the radiation hardness quality of the SOS declines when the crystalline quality of the Si near the sapphire interface is improved.In this paper, we will demonstrate that Ge implantation, rather than Si implantation normally employed in DSPE and SPEAR processes, is an efficient and more effective way to reduce the density of defects near the surface silicon region without improving the Si/sapphire interface region. Ge implantation may be used to engineer defects in the Si/sapphire interface region to eliminate back channel leakage problems.

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