Elastic constants of chemical-vapor-deposition diamond thin films: resonance ultrasound spectroscopy with laser-Doppler interferometry

2004 ◽  
Vol 52 (3) ◽  
pp. 765-771 ◽  
Author(s):  
Nobutomo Nakamura ◽  
Hirotsugu Ogi ◽  
Masahiko Hirao
1991 ◽  
Vol 59 (15) ◽  
pp. 1870-1871 ◽  
Author(s):  
M. Hoinkis ◽  
E. R. Weber ◽  
M. I. Landstrass ◽  
M. A. Plano ◽  
S. Han ◽  
...  

2002 ◽  
Vol 11 (3-6) ◽  
pp. 550-554 ◽  
Author(s):  
Adriana F. Azevedo ◽  
Evaldo J. Corat ◽  
Nélia F. Leite ◽  
Vladimir J. Trava-Airoldi

2016 ◽  
Vol 15 (4) ◽  
pp. 614-618 ◽  
Author(s):  
Hideyuki Watanabe ◽  
Hitoshi Umezawa ◽  
Toyofumi Ishikawa ◽  
Kazuki Kaneko ◽  
Shinichi Shikata ◽  
...  

Shinku ◽  
1987 ◽  
Vol 30 (2) ◽  
pp. 60-68
Author(s):  
Yoichi HIROSE ◽  
Yuki TERASAWA ◽  
Kazuya IWASAKI ◽  
Katumi TAKAHASHI ◽  
Kazuo TEZUKA

1996 ◽  
Vol 423 ◽  
Author(s):  
S. Mirzakuchaki ◽  
H. Golestanian ◽  
E. J. Charlson ◽  
T. Stacy

AbstractAlthough many researchers have studied boron-doped diamond thin films in the past several years, there have been few reports on the effects of doping CVD-grown diamond films with phosphorous. For this work, polycrystalline diamond thin films were grown by hot filament chemical vapor deposition (HFCVD) on p-type silicon substrates. Phosphorous was introduced into the reaction chamber as an in situ dopant during the growth. The quality and orientation of the diamond thin films were monitored by X-ray diffraction (XRD) and scanning electron microscopy (SEM). Current-voltage (I-V) data as a function of temperature for golddiamond film-silicon-aluminum structures were measured. The activation energy of the phosphorous dopants was calculated to be approximately 0.29 eV.


1995 ◽  
Vol 67 (24) ◽  
pp. 3557-3559 ◽  
Author(s):  
S. Mirzakuchaki ◽  
M. Hajsaid ◽  
H. Golestanian ◽  
R. Roychoudhury ◽  
E. J. Charlson ◽  
...  

2016 ◽  
Vol 108 (24) ◽  
pp. 241906 ◽  
Author(s):  
Mateusz Ficek ◽  
Kamatchi J. Sankaran ◽  
Jacek Ryl ◽  
Robert Bogdanowicz ◽  
I-Nan Lin ◽  
...  

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