Hydrogen-assisted failure in a twinning-induced plasticity steel studied under in situ hydrogen charging by electron channeling contrast imaging

2013 ◽  
Vol 61 (12) ◽  
pp. 4607-4618 ◽  
Author(s):  
Motomichi Koyama ◽  
Eiji Akiyama ◽  
Kaneaki Tsuzaki ◽  
Dierk Raabe
2002 ◽  
Vol 753 ◽  
Author(s):  
Martin A. Crimp ◽  
Boon-Chi Ng ◽  
Benjamin A. Simkin ◽  
Thomas R. Bieler

ABSTRACTTo gain a better understanding of the ductility limitations in TiAl alloys, the mechanisms involved in deformation strain transfer and/or microcrack initiation at grain boundaries have been examined in an equiaxed near-γ alloy. These studies have been carried out on both in-situ and ex-situ deformed bulk samples using scanning electron microscopy (SEM) techniques for both orientation analysis and deformation defect imaging. Selected area electron channeling patterns (SACPs) have allowed determination of grain orientations, eliminating ambiguity between the a and c axes. Deformation twins and dislocations have been imaged in the bulk samples using electron channeling contrast imaging (ECCI). A combination of ECCI contrast analysis and trace analysis based on orientations determined from SACP has allowed identification of the active deformation systems. Microcracks have been found to initiate at γ-γ boundaries as a result of an inability to adequately transfer twin strain from grain to grain. Once initiated, cracks propagate through cleavage and re-nucleation of grain boundary microcracks in front of the advancing crack. A geometric based predictive factor has been developed that accounts for microcrack initiation at γ-γ boundaries based in deformation twinning and strain accommodation by ordinary dislocations.


Materials ◽  
2019 ◽  
Vol 12 (15) ◽  
pp. 2479
Author(s):  
Meriem Ben Haj Slama ◽  
Nabila Maloufi ◽  
Julien Guyon ◽  
Slim Bahi ◽  
Laurent Weiss ◽  
...  

In this paper, we report the successful combination of macroscopic uniaxial tensile testing of bulk specimen combined with In situ dislocation-scale observations of the evolution of deformation microstructures during loading at several stress states. The dislocation-scale observations were performed by Accurate Electron Channeling Contrast Imaging in order to follow the defects evolution and their interactions with grain boundaries for several regions of interest during macroscopic loading. With this novel in situ procedure, the slip systems governing the deformation in polycrystalline bulk β-Ti21S are tracked during the macroscopic uniaxial tensile test. For instance, curved slip lines that are associated with “pencil glide” phenomenon and tangled dislocation networks are evidenced.


2020 ◽  
Vol 10 (1) ◽  
Author(s):  
Keiichiro Nakafuji ◽  
Motomichi Koyama ◽  
Kaneaki Tsuzaki

AbstractElastoplastic phenomena, such as plastic deformation and failure, are multi-scale, deformation-path-dependent, and mechanical-field-sensitive problems associated with metals. Accordingly, visualization of the microstructural deformation path under a specific mechanical field is challenging for the elucidation of elastoplastic phenomena mechanisms. To overcome this problem, a dislocation-resolved in-situ technique for deformation under mechanically controllable conditions is required. Thus, we attempted to apply electron channeling contrast imaging (ECCI) under tensile loading, which enabled the detection of lattice defect motions and the evolution of elastic strain fields in bulk specimens. Here, we presented the suitability of ECCI as an in-situ technique with dislocation-detectable spatial resolution. In particular, the following ECCI-visualized plasticity-related phenomena were observed: (1) pre-deformation-induced residual stress and its disappearance via subsequent reloading, (2) heterogeneous dislocation motion during plastic relaxation, and (3) planar surface relief formation via loading to a higher stress.


2014 ◽  
Vol 104 (23) ◽  
pp. 232111 ◽  
Author(s):  
Santino D. Carnevale ◽  
Julia I. Deitz ◽  
John A. Carlin ◽  
Yoosuf N. Picard ◽  
Marc De Graef ◽  
...  

2021 ◽  
Vol 27 (S1) ◽  
pp. 912-914
Author(s):  
Ari Blumer ◽  
Marzieh Baan ◽  
Zak Blumer ◽  
Jacob Boyer ◽  
Tyler J. Grassman

2013 ◽  
Vol 20 (1) ◽  
pp. 55-60 ◽  
Author(s):  
Gunasekar Naresh-Kumar ◽  
Jochen Bruckbauer ◽  
Paul R. Edwards ◽  
Simon Kraeusel ◽  
Ben Hourahine ◽  
...  

AbstractWe combine two scanning electron microscopy techniques to investigate the influence of dislocations on the light emission from nitride semiconductors. Combining electron channeling contrast imaging and cathodoluminescence imaging enables both the structural and luminescence properties of a sample to be investigated without structural damage to the sample. The electron channeling contrast image is very sensitive to distortions of the crystal lattice, resulting in individual threading dislocations appearing as spots with black–white contrast. Dislocations giving rise to nonradiative recombination are observed as black spots in the cathodoluminescence image. Comparison of the images from exactly the same micron-scale region of a sample demonstrates a one-to-one correlation between the presence of single threading dislocations and resolved dark spots in the cathodoluminescence image. In addition, we have also obtained an atomic force microscopy image from the same region of the sample, which confirms that both pure edge dislocations and those with a screw component (i.e., screw and mixed dislocations) act as nonradiative recombination centers for the Si-doped c-plane GaN thin film investigated.


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