Uniaxial stress-driven coupled grain boundary motion in hexagonal close-packed metals: A molecular dynamics study

We present results of atomistic computer simulations of spontaneous and stress-induced grain boundary (GB) migration in copper. Several symmetrical tilt GBs have been studied using the embedded-atom method and molecular dynamics. The GBs are observed to spontaneously migrate in a random manner. This spontaneous GB motion is always accompanied by relative translations of the grains parallel to the GB plane. Furthermore, external shear stresses applied parallel to the GB and normal to the tilt axis induce GB migration. Strong coupling is observed between the normal GB velocity vn and the grain translation rate v||. The mechanism of GB motion is established to be local lattice rotation within the GB core that does not involve any GB diffusion or sliding. The coupling constant between vn and v|| predicted within a simple geometric model accurately matches the molecular dynamics observations.

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Coupled grain boundary motion in a nanocrystalline grain boundary network

Scripta Materialia ◽

10.1016/j.scriptamat.2011.03.039 ◽

2011 ◽

Vol 65 (2) ◽

pp. 151-154 ◽

Cited By ~ 54

Author(s):

M. Velasco ◽

H. Van Swygenhoven ◽

C. Brandl

Keyword(s):

Grain Boundary ◽

Boundary Motion ◽

Grain Boundary Motion

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Motion of Crystal/Crystal and Crystal/Amorphous Interfaces

MRS Proceedings ◽

10.1557/proc-183-79 ◽

1990 ◽

Vol 183 ◽

Author(s):

J. L. Batstone

Keyword(s):

Electron Microscopy ◽

Transmission Electron Microscopy ◽

High Temperature ◽

Grain Boundary ◽

Boundary Motion ◽

High Temperature Annealing ◽

Thermally Activated ◽

Transmission Electron ◽

Grain Boundary Motion

AbstractMotion of ordered twin/matrix interfaces in films of silicon on sapphire occurs during high temperature annealing. This process is shown to be thermally activated and is analogous to grain boundary motion. Motion of amorphous/crystalline interfaces occurs during recrystallization of CoSi2 and NiSi2 from the amorphous phase. In-situ transmission electron microscopy has revealed details of the growth kinetics and interfacial roughness.

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Grain boundary motion in particulate material

Powders and Grains 2001 ◽

10.1201/9781003077497-134 ◽

2020 ◽

pp. 541-544

Author(s):

J.L. Turner ◽

M. Nakagawa ◽

M.T. Lusk

Keyword(s):

Grain Boundary ◽

Particulate Material ◽

Boundary Motion ◽

Grain Boundary Motion

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Recrystallization initiated by low-temperature grain boundary motion coupled to stress

International Journal of Materials Research (formerly Zeitschrift fuer Metallkunde) ◽

10.3139/146.110066 ◽

2009 ◽

Vol 100 (4) ◽

pp. 510-515 ◽

Cited By ~ 15

Author(s):

John W. Cahn ◽

Yuri Mishin

Keyword(s):

Low Temperature ◽

Grain Boundary ◽

Boundary Motion ◽

Grain Boundary Motion

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Grain Boundary Migration and Compensation Effect

Materials Science Forum ◽

10.4028/www.scientific.net/msf.550.387 ◽

2007 ◽

Vol 550 ◽

pp. 387-392

Author(s):

Pavel Lejček

Keyword(s):

Grain Boundary ◽

Grain Boundaries ◽

Compensation Effect ◽

Activation Enthalpy ◽

Boundary Migration ◽

Grain Boundary Migration ◽

Boundary Motion ◽

Exponential Factor ◽

Grain Boundary Motion

Anisotropy of grain boundary motion in a Fe–6at.%Si alloy is represented by a spectrum of values of the activation enthalpy of migration and the pre-exponential factor, depending on the orientation of individual grain boundaries. The general plot of these values exhibits a pronounced linear interdependence called the compensation effect. It is shown that changes of these values, caused by changes of intensive variables, are thermodynamically consistent.

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