Discretization of Poisson’s equation in two domains with non algebraic interface conditions for plasma simulations

2021 ◽  
Vol 403 ◽  
pp. 126179
Author(s):  
Andrea Villa ◽  
Luca Barbieri ◽  
Roberto Malgesini ◽  
Giacomo Buccella
2010 ◽  
Vol 2010 ◽  
pp. 1-17 ◽  
Author(s):  
Yaw Kyei ◽  
John Paul Roop ◽  
Guoqing Tang

We derive a family of sixth-order compact finite-difference schemes for the three-dimensional Poisson's equation. As opposed to other research regarding higher-order compact difference schemes, our approach includes consideration of the discretization of the source function on a compact finite-difference stencil. The schemes derived approximate the solution to Poisson's equation on a compact stencil, and thus the schemes can be easily implemented and resulting linear systems are solved in a high-performance computing environment. The resulting discretization is a one-parameter family of finite-difference schemes which may be further optimized for accuracy and stability. Computational experiments are implemented which illustrate the theoretically demonstrated truncation errors.


Author(s):  
N. Rouger

Purpose – Scientists and engineers have been solving Poisson’s equation in PN junctions following two approaches: analytical solving or numerical methods. Although several efforts have been accomplished to offer accurate and fast analyses of the electric field distribution as a function of voltage bias and doping profiles, so far none achieved an analytic or semi-analytic solution to describe neither a double diffused PN junction nor a general case for any doping profile. The paper aims to discuss these issues. Design/methodology/approach – In this work, a double Gaussian doping distribution is first considered. However, such a doping profile leads to an implicit problem where Poisson’s equation cannot be solved analytically. A method is introduced and successfully applied, and compared to a finite element analysis. The approach is then generalized, where any doping profile can be considered. 2D and 3D extensions are also presented, when symmetries occur for the doping profile. Findings – These results and the approach here presented offer an efficient and accurate alternative to numerical methods for the modeling and simulation of mathematical equations arising in physics of semiconductor devices. Research limitations/implications – A general 3D extension in the case where no symmetry exists can be considered for further developments. Practical implications – The paper strongly simplify and ease the optimization and design of any PN junction. Originality/value – This paper provides a novel method for electric field distribution analysis.


2017 ◽  
Vol 9 (2) ◽  
pp. 393-406 ◽  
Author(s):  
Hu Li ◽  
Jin Huang

AbstractIn this article, we consider the numerical solution for Poisson's equation in axisymmetric geometry. When the boundary condition and source term are axisymmetric, the problem reduces to solving Poisson's equation in cylindrical coordinates in the two-dimensional (r,z) region of the original three-dimensional domain S. Hence, the original boundary value problem is reduced to a two-dimensional one. To make use of the Mechanical quadrature method (MQM), it is necessary to calculate a particular solution, which can be subtracted off, so that MQM can be used to solve the resulting Laplace problem, which possesses high accuracy order and low computing complexities. Moreover, the multivariate asymptotic error expansion of MQM accompanied with for all mesh widths hi is got. Hence, once discrete equations with coarse meshes are solved in parallel, the higher accuracy order of numerical approximations can be at least by the splitting extrapolation algorithm (SEA). Meanwhile, a posteriori asymptotic error estimate is derived, which can be used to construct self-adaptive algorithms. The numerical examples support our theoretical analysis.


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