NUMERICAL SOLUTION OF THE PROBLEM FOR POISSON’S EQUATION WITH THE USE OF DAUBECHIES WAVELET DISCRETE-CONTINUAL FINITE ELEMENT METHOD

Numerical solution of the problem for Poisson’s equation with the use of Daubechies wavelet discrete continual finite element method (specific version of wavelet-based discrete-continual finite element method) is under consideration in the distinctive paper. The operational initial continual and discrete-continual formulations of the problem are given, several aspects of finite element approximation are considered. Some information about the numerical implementation and an example of analysis are presented.

On the methodology of calculating volume charge density in a MIFGMOS substrate using Poisson’s equation

Purpose This study aims to present a mathematical method based on Poisson’s equation to calculate the voltage and volume charge density formed in the substrate under the floating gate area of a multiple-input floating-gate metal-oxide semiconductor metal-oxide semiconductor (MOS) transistor. Design/methodology/approach Based on this method, the authors calculate electric fields and electric potentials from the charges generated when voltages are applied to the control gates (CG). This technique allows us to consider cases when the floating gate has any trapped charge generated during the manufacturing process. Moreover, the authors introduce a mathematical function to describe the potential behavior through the substrate. From the resultant electric field, the authors compute the volume charge density at different depths. Findings The authors generate some three-dimensional graphics to show the volume charge density behavior, which allows us to predict regions in which the volume charge density tends to increase. This will be determined by the voltages on terminals, which reveal the relationship between CG and volume charge density and will allow us to analyze some superior-order phenomena. Originality/value The procedure presented here and based on coordinates has not been reported before, and it is an aid to generate a model of the device and to build simulation tools in an analog design environment.

LOCALIZATION OF SOLUTION OF THE PROBLEM FOR POISSON’S EQUATION WITH THE USE OF B-SPLINE DISCRETE-CONTINUAL FINITE ELEMENT METHOD

Localization of solution of the problem for Poisson’s equation with the use of B-spline discrete-continual finiteelement method (specificversion of wavelet-based discrete-continual finiteelement method) is under consideration in the distinctive paper. The original operational continual and discrete-continual formulations of the problem are given, some actual aspects of construction of normalized basis functions of a B-spline are considered, the corresponding local constructions for an arbitrary discrete-continual finiteelement are described, some information about the numerical implementation and an example of analysis are presented.

Analytical Drain-Current Model and Surface-Potential Calculation for Junctionless Cylindrical Surrounding-Gate MOSFETs

In this paper, we propose an analytical drain-current model for long-channel junctionless (JL) cylindrical surrounding-gate MOSFET (SRG MOSFET). It is based on surface-potential solutions obtained from Poisson’s equation using some approximations and separate conditions. Furthermore, analytical compact expressions of the drain-current have been derived for deep depletion, partial depletion, and accumulation mode. The confrontation of the model with TCAD simulation results, performed with Silvaco Software, proves the validity and the accuracy of the developed model