Correlation between optical characterization of the plasma in reactive magnetron sputtering deposition of Zr–N on SS 316L and surface and mechanical properties of the deposited films

2008 ◽  
Vol 254 (15) ◽  
pp. 4632-4637 ◽  
Author(s):  
A. Fragiel ◽  
R. Machorro ◽  
J. Muñoz-Saldaña ◽  
J. Salinas ◽  
L. Cota
Keyword(s):  
Mechanical Properties ◽  
Magnetron Sputtering ◽  
Optical Characterization ◽  
Reactive Magnetron Sputtering ◽  
Reactive Magnetron ◽  
Sputtering Deposition ◽  
Deposited Films

Reactive magnetron sputtering deposition and characterization of niobium carbide films

Vacuum ◽  
2014 ◽  
Vol 99 ◽  
pp. 233-241 ◽  
Author(s):  
Kan Zhang ◽  
M. Wen ◽  
G. Cheng ◽  
X. Li ◽  
Q.N. Meng ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Niobium Carbide ◽  
Reactive Magnetron Sputtering ◽  
Reactive Magnetron ◽  
Sputtering Deposition

Voltage-controlled reactive magnetron sputtering of Nb-doped TiO2 films: electrical and optical properties

MRS Advances ◽  
2016 ◽  
Vol 1 (46) ◽  
pp. 3139-3144
Author(s):  
Stefan Seeger ◽  
Klaus Ellmer ◽  
Michael Weise ◽  
Johanna Reck ◽  
Rainald Mientus
Keyword(s):  
Magnetron Sputtering ◽  
Gas Flow ◽  
Discharge Voltage ◽  
Reactive Magnetron Sputtering ◽  
High Electron ◽  
Reactive Magnetron ◽  
Magnetron Discharge ◽  
Sputtering Deposition ◽  
Oxygen Gas ◽  
Deposited Films

ABSTRACTNiobium-doped TiO2 films as highly transparent conducting oxidic electrodes were prepared by reactive magnetron sputtering from a titanium target in an argon-oxygen gas flow. As-deposited films were amorphous and exhibited high resistivities ranging from 10 to 1×105 Ω cm in dependence on the deposition parameters. We stabilized the reactive magnetron sputtering deposition by adjusting the magnetron discharge voltage at a constant oxygen gas flow. The precise process control during the preparation of the as-deposited films was essential to gain low resistivities (10-3 Ω cm) and low optical absorption coefficients (α550nm < 2×103 cm-1) after annealing. These polycrystalline TiO2:Nb films on borosilicate glass show a quite high electron concentration > 1×1020 cm-3 and a high carrier mobility (≈ 8 cm2 V-1 s-1).

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