Combined effects of hydrostatic pressure and electric field on the donor binding energy and polarizability in laterally coupled double InAs/GaAs quantum-well wires

2010 ◽  
Vol 256 (23) ◽  
pp. 7234-7241 ◽  
Author(s):  
E. Tangarife ◽  
C.A. Duque
Keyword(s):  
Hydrostatic Pressure ◽  
Binding Energy ◽  
Electric Field ◽  
Quantum Well ◽  
Combined Effects ◽  
Donor Binding Energy ◽  
Quantum Well Wires

THE EFFECTS OF HYDROSTATIC PRESSURE AND APPLIED ELECTRIC FIELD ON SHALLOW DONOR IMPURITIES IN GaAs/GaAlAs GRADED QUANTUM WELL

2005 ◽  
Vol 12 (02) ◽  
pp. 155-159 ◽  
Author(s):  
E. KASAPOGLU ◽  
H. SARI ◽  
I. SÖKMEN
Keyword(s):  
Hydrostatic Pressure ◽  
Binding Energy ◽  
Electric Field ◽  
Quantum Well ◽  
Quantum Confinement ◽  
Variational Approach ◽  
Shallow Donor ◽  
Impurity Position ◽  
Donor Binding Energy ◽  
Electric Field Direction

Using a variational approach, we have investigated the effects of the hydrostatic pressure, the well dimension, impurity position and electric field direction on the binding energy of shallow donor impurities in GaAs/GaAlAs graded quantum well (GQW). We have found that the changes in donor binding energy in GQW strongly depend not only on the quantum confinement, but also on the hydrostatic pressure, on the direction of the electric field and on the impurity position.

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