Electronic states in double quantum well-wires with potential W-profile: combined effects of hydrostatic pressure and electric field

2010 ◽  
Vol 45 (18) ◽  
pp. 5045-5053 ◽  
Author(s):  
R. L. Restrepo ◽  
G. L. Miranda ◽  
C. A. Duque
Keyword(s):  
Hydrostatic Pressure ◽  
Electric Field ◽  
Quantum Well ◽  
Electronic States ◽  
Double Quantum ◽  
Combined Effects ◽  
Double Quantum Well ◽  
Quantum Well Wires

Symmetric and asymmetric GaAs/Al0.3Ga0.7As double quantum well subjected to hydrostatic pressure and applied electric field

2004 ◽  
Vol 241 (14) ◽  
pp. 3224-3230 ◽  
Author(s):  
A. L. Morales ◽  
N. Raigoza ◽  
A. Montes ◽  
N. Porras-Montenegro ◽  
C. A. Duque
Keyword(s):  
Hydrostatic Pressure ◽  
Electric Field ◽  
Quantum Well ◽  
Applied Electric Field ◽  
Double Quantum ◽  
Double Quantum Well

The impurity states in InGaAsP/InP coaxial double quantum well wires with the effects of electric and magnetic fields

2021 ◽  
pp. 2150355
Author(s):  
Min Hu ◽  
Hailong Wang ◽  
Qian Gong
Keyword(s):  
Electric Field ◽  
Quantum Well ◽  
Quantum Wires ◽  
Binding Energies ◽  
Double Quantum ◽  
Impurity States ◽  
Impurity Position ◽  
Double Quantum Well ◽  
Electric And Magnetic Fields ◽  
Quantum Well Wires

The hydrogen donor impurity states are calculated in [Formula: see text] coaxial double quantum well wires by the plane wave method under the theoretical framework of effective mass envelope function approximation. The binding energies of impurity in [Formula: see text] state and [Formula: see text] state are obtained as the functions of impurity position, distance between the inner and outer quantum wires, magnetic and electric field strengths. Transition energies are calculated as the functions of impurity position, distance between the inner and outer quantum wires. The effects of quantum wire thickness and distance of quantum wires on impurity states are analyzed in detail. It is found that the effects of electric field and magnetic field on binding energy of [Formula: see text] state are different for impurity located at different positions.

Electronic States in Cd1−xZnxTe/CdTe Strained Layer Coupled Double Quantum Wells and their Photoluminescence

1994 ◽  
Vol 358 ◽  
Author(s):  
Tiesheng Li ◽  
H. J. Lozykowski
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Lattice Mismatch ◽  
Electronic States ◽  
Double Quantum ◽  
Strain Effect ◽  
Strained Layer ◽  
Quantum Well Structure ◽  
Double Quantum Well ◽  
Theoretical Investigations

ABSTRACTExperimental and theoretical investigations of electronic states in a strained-layer CdTe/CdZnTe coupled double quantum well structure are presented. The optical properties of this lattice mismatched heterostructure were characterized by photoluminescence (PL), PL excitation and polarization spectroscopies. The influence of electrical field on exciton states in the strained layer CdTe/CdZnTe coupled double quantum well structure is experimentally studied. The confined electronic states were calculated in the framework of the envelope function approach, taking into account the strain effect induced by the lattice-mismatch. Experimental results are compared with the calculated transition energies.

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