Theoretical and experimental analysis on effect of porous silicon surface treatment in multicrystalline silicon solar cells

2015 ◽  
Vol 353 ◽  
pp. 106-111 ◽  
Author(s):  
Lotfi Khezami ◽  
Abdulrahman Omar Al Megbel ◽  
Abdelbasset Bessadok Jemai ◽  
Mohamed Ben Rabha
Keyword(s):  
Solar Cells ◽  
Porous Silicon ◽  
Surface Treatment ◽  
Experimental Analysis ◽  
Silicon Surface ◽  
Multicrystalline Silicon ◽  
Silicon Solar Cells ◽  
Porous Silicon Surface

The porous silicon emitter concept applied to multicrystalline silicon solar cells

1997 ◽  
Vol 297 (1-2) ◽  
pp. 291-295 ◽  
Author(s):  
S Strehlke ◽  
D Sarti ◽  
A Krotkus ◽  
K Grigoras ◽  
C Lévy-Clément
Keyword(s):  
Solar Cells ◽  
Porous Silicon ◽  
Multicrystalline Silicon ◽  
Silicon Solar Cells

Combination of silicon nitride and porous silicon induced optoelectronic features enhancement of multicrystalline silicon solar cells

2011 ◽  
Vol 8 (6) ◽  
pp. 1874-1877 ◽  
Author(s):  
Mohamed Ben Rabha ◽  
Wissem Dimassi ◽  
Mounir Gaidi ◽  
Hatem Ezzaouia ◽  
Brahim Bessais
Keyword(s):  
Solar Cells ◽  
Silicon Nitride ◽  
Porous Silicon ◽  
Multicrystalline Silicon ◽  
Silicon Solar Cells

Strong Enhancement of Porous Silicon Photoluminescence by Dry Photo-Chemical Surface Treatment

2000 ◽  
Vol 638 ◽  
Author(s):  
S. Stolyarova ◽  
A. El-Bahar ◽  
Y. Nemirovsky
Keyword(s):  
Porous Silicon ◽  
Surface Treatment ◽  
Oxide Layer ◽  
Silicon Surface ◽  
Native Oxide ◽  
Photoluminescence Intensity ◽  
Chemical Surface ◽  
Porous Silicon Surface ◽  
Crystalline Oxide ◽  
Photoluminescence Enhancement

AbstractPorous silicon has been subjected to NF3/UV photochemical surface treatment in the range of 300-4000C. This treatment is found to enhance strongly the photoluminescence of porous silicon by couple orders of magnitude. The effect of photoluminescence enhancement has been observed only when the NF3 treated porous silicon was exposed to air environment. The photoluminescence intensity continued to grow with the aging time in air, even at the room temperature. Using atomic force microscope, scanning electron microscope and Auger measurements, it is found that the photoluminescence enhancement correlated with the formation of crystalline oxide layer at the porous silicon surface. This oxide layer SiOx (x≅2) is much more stoichiometric as compared to the native oxide SiOx (x≅1) covering the reference porous silicon surface (not treated by NF3). The rapid growth of the SiO2 layer is supposed to be due to the NF3/UV photo-thermal etching of the as-formed native oxide as well as to the cleaning and passivation of the porous silicon surface with fluorine.

Multicrystalline silicon solar cells with porous silicon emitter

2000 ◽  
Vol 60 (4) ◽  
pp. 391-420 ◽  
Author(s):  
R.R. Bilyalov ◽  
R. Lüdemann ◽  
W. Wettling ◽  
L. Stalmans ◽  
J. Poortmans ◽  
...  
Keyword(s):  
Solar Cells ◽  
Porous Silicon ◽  
Multicrystalline Silicon ◽  
Silicon Solar Cells
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