Strong Enhancement of Porous Silicon Photoluminescence by Dry Photo-Chemical Surface Treatment

AbstractPorous silicon has been subjected to NF3/UV photochemical surface treatment in the range of 300-4000C. This treatment is found to enhance strongly the photoluminescence of porous silicon by couple orders of magnitude. The effect of photoluminescence enhancement has been observed only when the NF3 treated porous silicon was exposed to air environment. The photoluminescence intensity continued to grow with the aging time in air, even at the room temperature. Using atomic force microscope, scanning electron microscope and Auger measurements, it is found that the photoluminescence enhancement correlated with the formation of crystalline oxide layer at the porous silicon surface. This oxide layer SiOx (x≅2) is much more stoichiometric as compared to the native oxide SiOx (x≅1) covering the reference porous silicon surface (not treated by NF3). The rapid growth of the SiO2 layer is supposed to be due to the NF3/UV photo-thermal etching of the as-formed native oxide as well as to the cleaning and passivation of the porous silicon surface with fluorine.

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Theoretical and experimental analysis on effect of porous silicon surface treatment in multicrystalline silicon solar cells

Applied Surface Science ◽

10.1016/j.apsusc.2015.06.090 ◽

2015 ◽

Vol 353 ◽

pp. 106-111 ◽

Cited By ~ 8

Author(s):

Lotfi Khezami ◽

Abdulrahman Omar Al Megbel ◽

Abdelbasset Bessadok Jemai ◽

Mohamed Ben Rabha

Keyword(s):

Solar Cells ◽

Porous Silicon ◽

Surface Treatment ◽

Experimental Analysis ◽

Silicon Surface ◽

Multicrystalline Silicon ◽

Silicon Solar Cells ◽

Porous Silicon Surface

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Optoelectronic effect of porous silicon surface treatment with samarium ions for different deposition times and characterizations

The International Journal of Advanced Manufacturing Technology ◽

10.1007/s00170-017-0600-y ◽

2017 ◽

Vol 93 (5-8) ◽

pp. 2403-2410 ◽

Cited By ~ 3

Author(s):

Ahmed Zarroug ◽

Zouheir Bouznif ◽

Zied Ben Hamed ◽

Lotfi Derbali ◽

Hatem Ezzaouia

Keyword(s):

Porous Silicon ◽

Surface Treatment ◽

Silicon Surface ◽

Porous Silicon Surface

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Angular Ellipsometry of Porous Silicon Surface Layers

Journal of Nano- and Electronic Physics ◽

10.21272/jnep.12(3).03024 ◽

2020 ◽

Vol 12 (3) ◽

pp. 03024-1-03024-4

Author(s):

L. V. Poperenko ◽

◽

S. G. Rozouvan ◽

I. V. Yurgelevych ◽

P. O. Lishchuk ◽

...

Keyword(s):

Porous Silicon ◽

Silicon Surface ◽

Surface Layers ◽

Porous Silicon Surface

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Enhancement of the photoluminescence property of hybrid structures using single-walled carbon nanotubes/pyramidal porous silicon surface

Journal of Alloys and Compounds ◽

10.1016/j.jallcom.2017.10.040 ◽

2018 ◽

Vol 731 ◽

pp. 978-984 ◽

Cited By ~ 8

Author(s):

Haythem Gammoudi ◽

Fatma Belkhiria ◽

Kamel Sahlaoui ◽

Walid Zaghdoudi ◽

Mahmoud Daoudi ◽

...

Keyword(s):

Carbon Nanotubes ◽

Porous Silicon ◽

Silicon Surface ◽

Photoluminescence Property ◽

Single Walled Carbon Nanotubes ◽

Hybrid Structures ◽

Single Walled Carbon ◽

Porous Silicon Surface ◽

Walled Carbon Nanotubes

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Porous Silicon Structural Evolution from In-Situ Luminescence and Raman Measurements

MRS Proceedings ◽

10.1557/proc-431-171 ◽

1996 ◽

Vol 431 ◽

Author(s):

D. R. Tallant ◽

M. J. Kelly ◽

T. R. Guilinger ◽

R. L. Simpson

Keyword(s):

Porous Silicon ◽

Silicon Surface ◽

Structural Evolution ◽

Surface Oxidation ◽

Ethanol Solution ◽

Nonradiative Recombination ◽

Photoluminescence Intensity ◽

Exciton Migration ◽

Photoluminescence Mechanism

AbstractWe performed in-situ photoluminescence and Raman measurements on an anodized silicon surface in the HF/ethanol solution used for anodization. The porous silicon thereby produced, while resident in HF/ethanol, does not immediately exhibit intense photoluminescence. Intense photoluminescence develops spontaneously in HF/ethanol after 18–24 hours or with replacement of the HF/ethanol with water. These results support a quantum confinement mechanism in which exciton migration to traps and nonradiative recombination dominates the de-excitation pathways until silicon nanocrystals are physically separated and energetically decoupled by hydrofluoric acid etching or surface oxidation. The porous silicon surface, as produced by anodization, shows large differences in photoluminescence intensity and peak wavelength over millimeter distances. Parallel Raman measurements implicate nanometer-size silicon particles in the photoluminescence mechanism.

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Chemical Modification of the Porous Silicon Surface

MRS Proceedings ◽

10.1557/proc-358-387 ◽

1994 ◽

Vol 358 ◽

Cited By ~ 12

Author(s):

Eric J. Lee ◽

James S. Ha ◽

Michael J. Sailor

Keyword(s):

Porous Silicon ◽

Chemical Modification ◽

Formic Acid ◽

Gas Phase ◽

Silicon Surface ◽

Chemical Vapor ◽

Luminescence Quenching ◽

Porous Silicon Surface ◽

Phase Water ◽

Surface Modified

ABSTRACTThe porous silicon (PS) surface is derivatized with ethanol, triethylsilanol and formic acid as well as oxidized with water. The two reactions used to prepare these surfaces are discussed, and FTIR spectra of the products are presented. Surface-modified PS retains 10-40% of its original photoluminescence. PS-derivatives display reversible luminescence quenching by gas phase water, ethanol, acetonitrile and benzene. The extent of quenching varies with different PS-derivatives depending on the interaction of the chemical vapor with the modified PS surfaces.

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