Silicon surface passivation using thin HfO2 films by atomic layer deposition

2015 ◽  
Vol 357 ◽  
pp. 635-642 ◽  
Author(s):  
Jhuma Gope ◽  
Vandana ◽  
Neha Batra ◽  
Jagannath Panigrahi ◽  
Rajbir Singh ◽  
...  
2014 ◽  
Vol 53 (4S) ◽  
pp. 04ER19 ◽  
Author(s):  
Kwang-Seok Jeong ◽  
Sung-Kwen Oh ◽  
Hong-Sik Shin ◽  
Ho-Jin Yun ◽  
Seong-Hyeon Kim ◽  
...  

2021 ◽  
Author(s):  
Ran Zhao ◽  
Kai Zhang ◽  
Jiahao Zhu ◽  
Shuang Xiao ◽  
Wei Xiong ◽  
...  

Interface passivation is of the pivot to achieve high-efficiency organic metal halide perovskite solar cells (PSCs). Atomic layer deposition (ALD) of wide band gap oxides has recently shown great potential...


2015 ◽  
Vol 7 (24) ◽  
pp. 13154-13163 ◽  
Author(s):  
B. Ahmed ◽  
Muhammad Shahid ◽  
D. H. Nagaraju ◽  
D. H. Anjum ◽  
Mohamed N. Hedhili ◽  
...  

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