First-principles calculation of hydrogen adsorption and diffusion on Mn-doped Mg 2 Ni (010) surfaces

2017 ◽  
Vol 425 ◽  
pp. 148-155 ◽  
Author(s):  
Ziying Zhang ◽  
Jiarui Jin ◽  
Huizhen Zhang ◽  
Xiaoxiao Qi ◽  
Yang Bian ◽  
...  
2018 ◽  
Vol 8 (12) ◽  
pp. 2466 ◽  
Author(s):  
Yang Wu ◽  
Zhongmin Wang ◽  
Dianhui Wang ◽  
Jiayao Qin ◽  
Zhenzhen Wan ◽  
...  

To investigate Mo doping effects on the hydrogen permeation performance of Nb membranes, we study the most likely process of atomic hydrogen adsorption and diffusion on/into Mo-doped Nb (100) surface/subsurface (in the Nb12Mo4 case) via first-principles calculations. Our results reveal that the (100) surface is the most stable Mo-doped Nb surface with the smallest surface energy (2.75 J/m2). Hollow sites (HSs) in the Mo-doped Nb (100) surface are H-adsorption-favorable mainly due to their large adsorption energy (−4.27 eV), and the H-diffusion path should preferentially be HS→TIS (tetrahedral interstitial site) over HS→OIS (octahedral interstitial site) because of the correspondingly lower H-diffusion energy barrier. With respect to a pure Nb (100) surface, the Mo-doped Nb (100) surface has a smaller energy barrier along the HS→TIS pathway (0.31 eV).


2013 ◽  
Vol 425 ◽  
pp. 38-41 ◽  
Author(s):  
M.S. Wu ◽  
B. Xu ◽  
G. Liu ◽  
X.L. Lei ◽  
C.Y. Ouyang

2011 ◽  
Vol 115 (14) ◽  
pp. 6809-6814 ◽  
Author(s):  
Mazharul M. Islam ◽  
Monica Calatayud ◽  
Gianfranco Pacchioni

2013 ◽  
Vol 30 (1) ◽  
pp. 017103 ◽  
Author(s):  
Juan Huang ◽  
Hong-Jin Chen ◽  
Mu-Sheng Wu ◽  
Gang Liu ◽  
Chu-Ying Ouyang ◽  
...  

2002 ◽  
Vol 749 ◽  
Author(s):  
A. van de Walle ◽  
M. Asta ◽  
P. W. Voorhees

ABSTRACTFirst-principles calculations are used to calculate the strain dependencies of the binding and diffusion-activation energies for Ge adatoms on both Si(001) and Ge(001) c(4×2) reconstructed surfaces. Our calculations reveal that over the range of strains typically sampled during quantum dot self-assembly (0 to 1% compressive strain) the binding and activation energies on a strained Ge(001) surface increase and decrease, respectively, by 0.21 eV and 0.12 eV. For a growth temperature of 600 °C, these strain-dependencies give rise to a 16-fold increase in adatom density and a 5-fold decrease in adatom diffusivity in the region of compressive strain surrounding a Ge island with a characteristic size of 10 nm lying on top of a Si substrate covered by a Ge wetting layer.


1988 ◽  
Vol 141 ◽  
Author(s):  
James R. Chelikowsky-al ◽  
M.-Y. Chou

AbstractHydrogen adsorption and diffusion on the (0001) surface of ruthenium is investigated using ab initio pseudopotentials within the local density approximation. The adsorption energies at a number of different sites and bond lengths were investigated via total energy calculations. Using these calculated values a potential surface was constructed and an estimate for the activation barrier for hydrogen diffusion was obtained. The calculated value of 4.0 kcal is in good accord with the value of ≈ 4 kcal as determined from laser-induced thermal desorption experiments.


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