Reference binding energies of transition metal carbides by core-level x-ray photoelectron spectroscopy free from Ar+ etching artefacts

Core level binding energies, measured by X-ray photoelectron spectroscopy providing unique information regarding the chemical environment of atoms in a system, can be estimated by a diversity of state-of-the-art accurate methods here detailed.

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Molecular core binding energies for some transition metal carbonyls and π-cyclopentadienyls as determined by X-ray photoelectron spectroscopy

Journal of the Chemical Society D Chemical Communications ◽

10.1039/c29710000740 ◽

1971 ◽

Vol 0 (14) ◽

pp. 740-741 ◽

Cited By ~ 31

Author(s):

D. T. Clark ◽

D. B. Adams

Keyword(s):

Transition Metal ◽

Photoelectron Spectroscopy ◽

Binding Energies ◽

Metal Carbonyls ◽

X Ray ◽

Molecular Core ◽

Transition Metal Carbonyls

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Surface shifts in core level energies of transition metal carbides and nitrides

The Chemistry of Transition Metal Carbides and Nitrides ◽

10.1007/978-94-009-1565-7_25 ◽

1996 ◽

pp. 455-472

Author(s):

L. I. Johansson

Keyword(s):

Transition Metal ◽

Core Level ◽

Metal Carbides ◽

Transition Metal Carbides

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Dissociation curves and binding energies of diatomic transition metal carbides from density functional theory

International Journal of Quantum Chemistry ◽

10.1002/qua.22950 ◽

2011 ◽

Vol 111 (15) ◽

pp. 4276-4287 ◽

Cited By ~ 8

Author(s):

Satyender Goel ◽

Artëm E. Masunov

Keyword(s):

Density Functional Theory ◽

Transition Metal ◽

Density Functional ◽

Binding Energies ◽

Metal Carbides ◽

Functional Theory ◽

Transition Metal Carbides ◽

Dissociation Curves

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Characterization of Oxidized Nickel (II) Dimethylglyoxime Using X-Ray Photoelectron Spectroscopy

Applied Spectroscopy ◽

10.1366/0003702874447842 ◽

1987 ◽

Vol 41 (6) ◽

pp. 994-1000 ◽

Cited By ~ 8

Author(s):

V. Y. Young ◽

F. C. Chang ◽

K. L. Cheng

Keyword(s):

Oxidation State ◽

Photoelectron Spectroscopy ◽

Binding Energies ◽

Core Level ◽

Solution Phase ◽

Intensity Data ◽

X Ray ◽

Complex Core

X-ray photoelectron spectroscopy has been used to determine the oxidation state of nickel in the oxidized nickel (II) dimethylglyoxime complex. Core level binding energies for the Ni(2p), N(1s), and O(1s) levels; the presence or absence of shake-up satellites on the Ni(2p) levels; and the analysis of intensity data are consistent only with an assignment of +3. Structures consistent with the data are proposed for both the solid-and the solution-phase complexes.

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Impurities in SiO2: Atomic States of Phosphorus and Arsenic

MRS Proceedings ◽

10.1557/proc-82-103 ◽

1986 ◽

Vol 82 ◽

Cited By ~ 1

Author(s):

H. E. Rhodes ◽

G. Apai

Keyword(s):

Binding Energy ◽

Silicon Dioxide ◽

Photoelectron Spectroscopy ◽

Binding Energies ◽

Core Level ◽

X Ray ◽

Impurity Atoms ◽

Atomic States ◽

Energy Signal ◽

State 1

ABSTRACTWe have studied the atomic states of arsenic (As) and phosphorus (P) in SiO2 using X-ray photoelectron spectroscopy (XPS). Silicon dioxide implanted with As or P shows multiple XPS core level peaks corresponding to the impurity atoms located in two distinct atomic sites. The binding energies of the two arsenic 3d core levels occur at 45.8 and 42.3 eV and the two phosphorus 2p core levels occur at 134.7 and 130.3 eV. When the implanted oxides are annealed in an oxygen ambient between 900°C and 950°C, only the highbinding- energy peaks of P and As are observed. This identifies the highbinding- energy core level peaks as being associated with the impurity (P or As) on silicon sites. Annealing in nitrogen at 950° C results in an increase in the low-binding-energy signal. The low-binding-energy peaks are associated with the impurity (P or As) bonded to silicon neighbors. The relative amounts of dopants in silicon and oxygen sites depend on ambient purity and processing details. Reference to previous work shows that the presence of As or P on silicon sites in SiO2 corresponds to a fast diffusing state whereas As or P on oxygen sites corresponds to a slow diffusing state [1].

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