High quality GaN buffer layer by isoelectronic doping and its application to 365 nm InGaN/AlGaN ultraviolet light-emitting diodes
2019 ◽
Vol 471
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pp. 231-238
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2016 ◽
Vol 12
(8)
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pp. 869-872
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2010 ◽
Vol 49
(2)
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pp. 022102
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2003 ◽
Vol 32
(5)
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pp. 364-370
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2017 ◽
Vol 214
(6)
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pp. 1600714
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