Chemical bonding states and dopant redistribution of heavily phosphorus-doped epitaxial silicon films: Effects of millisecond laser annealing and doping concentration

2020 ◽  
Vol 504 ◽  
pp. 144447
Author(s):  
H.-Y. Ryu ◽  
M. Lee ◽  
H. Park ◽  
D.-H. Ko
Keyword(s):  
Chemical Bonding ◽  
Doping Concentration ◽  
Laser Annealing ◽  
Silicon Films ◽  
Epitaxial Silicon ◽  
Dopant Redistribution ◽  
Phosphorus Doped ◽  
Millisecond Laser

Microstructure of polycrystalline silicon films obtained by combined furnace and laser annealing

1995 ◽  
Vol 66 (11) ◽  
pp. 1394-1396 ◽  
Author(s):  
R. Carluccio ◽  
J. Stoemenos ◽  
G. Fortunato ◽  
D. B. Meakin ◽  
M. Bianconi
Keyword(s):  
Polycrystalline Silicon ◽  
Laser Annealing ◽  
Silicon Films ◽  
Polycrystalline Silicon Films

Far-infrared free-hole absorption in epitaxial silicon films for homojunction detectors

1997 ◽  
Vol 71 (4) ◽  
pp. 515-517 ◽  
Author(s):  
A. G. U. Perera ◽  
W. Z. Shen ◽  
W. C. Mallard ◽  
M. O. Tanner ◽  
K. L. Wang
Keyword(s):  
Far Infrared ◽  
Silicon Films ◽  
Epitaxial Silicon ◽  
Free Hole

Growth Mechanism of Laser Annealing of Nickel-Induced Lateral Crystallized Silicon Films

2006 ◽  
Vol 45 (1A) ◽  
pp. 21-27 ◽  
Author(s):  
Guo-Ren Hu ◽  
YewChung Sermon Wu ◽  
Chi-Wei Chao ◽  
Hsieh-Chih Shih
Keyword(s):  
Growth Mechanism ◽  
Laser Annealing ◽  
Silicon Films
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