Mechanical property of the low dielectric carbon doped silicon oxide thin film grown from MTMS/O2 source

2006 ◽  
Vol 6 (2) ◽  
pp. 243-247 ◽  
Author(s):  
C.S. Yang ◽  
C.K. Choi
Keyword(s):  
Thin Film ◽  
Mechanical Property ◽  
Silicon Oxide ◽  
Oxide Thin Film ◽  
Carbon Doped ◽  
Low Dielectric ◽  
Doped Silicon

Formation and Characteristics of the Low Dielectric Carbon Doped Silicon Oxide Thin Film Deposited by MTMS/O2 – ICPCVD

2005 ◽  
Vol 107 ◽  
pp. 103-106
Author(s):  
Chang Sil Yang ◽  
Heon Ju Lee ◽  
Chi Kyu Choi
Keyword(s):  
Dielectric Constant ◽  
Inductively Coupled Plasma ◽  
Silicon Oxide ◽  
Chemical Vapor ◽  
Annealed Film ◽  
Oxide Thin Film ◽  
Plasma Chemical Vapor Deposition ◽  
Carbon Doped ◽  
Low Dielectric ◽  
Doped Silicon

Carbon doped silicon oxide (SiOC(-H)) films with low dielectric constant were deposited on a p-type Si(100) substrate using inductively coupled plasma chemical vapor deposition with a methyltrimethoxysilane (MTMS : CH3Si(OCH3)3) precursor and oxygen gases. The dielectric constant of the SiOC(-H) composite film depends on the relative carbon concentration and the content of the ring link mode in SiOC(-H) bonding structure. The elastic modulus and the dielectric constant decreased by the annealing process. The lowest dielectric constant of an annealed film at 400 °C was about 2.25, which was deposited with [MTMS/(MTMS+O2)]×100 flow ratio of 100%.

Investigation of low dielectric carbon-doped silicon oxide films prepared by PECVD using methyltrimethoxysilane precursor

2006 ◽  
Vol 506-507 ◽  
pp. 50-54 ◽  
Author(s):  
Chang Sil Yang ◽  
Young Hun Yu ◽  
Kwang-Man Lee ◽  
Heon-Ju Lee ◽  
Chi Kyu Choi
Keyword(s):  
Silicon Oxide ◽  
Oxide Films ◽  
Carbon Doped ◽  
Low Dielectric ◽  
Doped Silicon

Effects of annealing on low dielectric constant carbon doped silicon oxide films

2006 ◽  
Vol 15 (1) ◽  
pp. 133-137 ◽  
Author(s):  
E. Rusli ◽  
M.R. Wang ◽  
T.K.S. Wong ◽  
M.B. Yu ◽  
C.Y. Li
Keyword(s):  
Dielectric Constant ◽  
Silicon Oxide ◽  
Oxide Films ◽  
Low Dielectric Constant ◽  
Carbon Doped ◽  
Low Dielectric ◽  
Doped Silicon

A method to derivatize surface silanol groups to Si-alkyl groups in carbon-doped silicon oxides

RSC Advances ◽  
2016 ◽  
Vol 6 (95) ◽  
pp. 93219-93230 ◽  
Author(s):  
Srikar Rao Darmakkolla ◽  
Hoang Tran ◽  
Atul Gupta ◽  
Shankar B. Rananavare
Keyword(s):  
Dielectric Constant ◽  
Integrated Circuits ◽  
Silicon Oxide ◽  
Copper Interconnects ◽  
Low Dielectric Constant ◽  
Silicon Oxides ◽  
Carbon Doped ◽  
Low Dielectric ◽  
Alkyl Groups ◽  
Doped Silicon

A carbon-doped silicon oxide (CDO) finds use as a material with a low dielectric constant (k) for copper interconnects in multilayered integrated circuits (ICs).

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