Reduction of Oxygen Plasma Damage by Postdeposition Helium Plasma Treatment for Carbon-Doped Silicon Oxide Low Dielectric Constant Films

2003 ◽  
Vol 6 (1) ◽  
pp. F1 ◽  
Author(s):  
Y. H. Wang ◽  
D. Gui ◽  
R. Kumar ◽  
P. D. Foo
Keyword(s):  
Dielectric Constant ◽  
Plasma Treatment ◽  
Oxygen Plasma ◽  
Silicon Oxide ◽  
Low Dielectric Constant ◽  
Helium Plasma ◽  
Plasma Damage ◽  
Carbon Doped ◽  
Low Dielectric ◽  
Doped Silicon

Effects of annealing on low dielectric constant carbon doped silicon oxide films

2006 ◽  
Vol 15 (1) ◽  
pp. 133-137 ◽  
Author(s):  
E. Rusli ◽  
M.R. Wang ◽  
T.K.S. Wong ◽  
M.B. Yu ◽  
C.Y. Li
Keyword(s):  
Dielectric Constant ◽  
Silicon Oxide ◽  
Oxide Films ◽  
Low Dielectric Constant ◽  
Carbon Doped ◽  
Low Dielectric ◽  
Doped Silicon

A method to derivatize surface silanol groups to Si-alkyl groups in carbon-doped silicon oxides

RSC Advances ◽  
2016 ◽  
Vol 6 (95) ◽  
pp. 93219-93230 ◽  
Author(s):  
Srikar Rao Darmakkolla ◽  
Hoang Tran ◽  
Atul Gupta ◽  
Shankar B. Rananavare
Keyword(s):  
Dielectric Constant ◽  
Integrated Circuits ◽  
Silicon Oxide ◽  
Copper Interconnects ◽  
Low Dielectric Constant ◽  
Silicon Oxides ◽  
Carbon Doped ◽  
Low Dielectric ◽  
Alkyl Groups ◽  
Doped Silicon

A carbon-doped silicon oxide (CDO) finds use as a material with a low dielectric constant (k) for copper interconnects in multilayered integrated circuits (ICs).

scholarly journals In-Situ Repair Plasma-Induced Damage and Cap Dielectric Barrier for Porous Low-Dielectric-Constant Materials by HMDS Plasma Treatment

Coatings ◽  
2021 ◽  
Vol 11 (3) ◽  
pp. 314
Author(s):  
Chih-Yen Lee ◽  
Chi-Yang Yan ◽  
Yi-Lung Cheng
Keyword(s):  
Dielectric Constant ◽  
Plasma Treatment ◽  
Metal Ion ◽  
Treatment Time ◽  
Advanced Technology ◽  
Low Dielectric Constant ◽  
Plasma Damage ◽  
Low Dielectric ◽  
Low K

Plasma damage and metal ion penetration are critical issues for porous low-dielectric-constant (low-k) materials used in the back-end-of-line interconnects. This study proposed a novel process with in-situ repairing plasma-induced damage and capping a barrier for porous low-k materials by Hexamethyldisilazane (HDMS) plasma treatment. For a plasma-damaged porous low-k material, its surface hydrophilic state was transformed to hydrophobic state by HDMS plasma treatment, revealing that damage was repaired. Simultaneously, a dielectric film was capped onto the porous low-k material, and displayed better barrier capability against Cu migration. Additionally, the breakdown reliability of the stacked dielectric was enhanced by the means of HDMS plasma treatment. The optimized HDMS plasma treatment time was found to be 10 s. Therefore, this proposed HDMS plasma treatment processing is a promising technique for highly applicable low-k material used for advanced technology nodes.

Structure characterization of carbon and fluorine-doped silicon oxide films with low dielectric constant

2001 ◽  
Vol 71 (2) ◽  
pp. 125-130 ◽  
Author(s):  
Shi-Jin Ding ◽  
Li Chen ◽  
Xin-Gong Wan ◽  
Peng-Fei Wang ◽  
Jian-Yun Zhang ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Silicon Oxide ◽  
Oxide Films ◽  
Structure Characterization ◽  
Low Dielectric Constant ◽  
Low Dielectric ◽  
Doped Silicon
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