Effects of annealing on low dielectric constant carbon doped silicon oxide films

2006 ◽  
Vol 15 (1) ◽  
pp. 133-137 ◽  
Author(s):  
E. Rusli ◽  
M.R. Wang ◽  
T.K.S. Wong ◽  
M.B. Yu ◽  
C.Y. Li
2001 ◽  
Vol 71 (2) ◽  
pp. 125-130 ◽  
Author(s):  
Shi-Jin Ding ◽  
Li Chen ◽  
Xin-Gong Wan ◽  
Peng-Fei Wang ◽  
Jian-Yun Zhang ◽  
...  

RSC Advances ◽  
2016 ◽  
Vol 6 (95) ◽  
pp. 93219-93230 ◽  
Author(s):  
Srikar Rao Darmakkolla ◽  
Hoang Tran ◽  
Atul Gupta ◽  
Shankar B. Rananavare

A carbon-doped silicon oxide (CDO) finds use as a material with a low dielectric constant (k) for copper interconnects in multilayered integrated circuits (ICs).


2001 ◽  
Vol 90 (7) ◽  
pp. 3367-3370 ◽  
Author(s):  
Yoon-Hae Kim ◽  
Moo Sung Hwang ◽  
Hyeong Joon Kim ◽  
Jin Yong Kim ◽  
Young Lee

2006 ◽  
Vol 506-507 ◽  
pp. 50-54 ◽  
Author(s):  
Chang Sil Yang ◽  
Young Hun Yu ◽  
Kwang-Man Lee ◽  
Heon-Ju Lee ◽  
Chi Kyu Choi

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